5LN01M - описание и поиск аналогов

Ordering number EN6137A 5LN01M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01M Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS 10

Ordering number EN6137C 5LN01M N-Channel Small Signal MOSFET http //onsemi.com 50V, 0.1A, 7.8 , Single MCP Features Low ON-resistance Ultrahigh-speed switching 1.5V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 50 V Gate to Source Voltage VGSS 10 V Drain Current (DC) ID 0.1 A D

Ordering number EN6555A 5LN01C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01C Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS 10

Ordering number EN6560A 5LN01SS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01SS Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS

Ordering number ENN6558 5LN01N N-Channel Silicon MOSFET 5LN01N Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2178 2.5V drive. [5LN01N] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Source 1 2 3 2 Drain 3 Gate Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta=25 C Parameter

Ordering number EN6561A 5LN01S SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS 10

Ordering number ENN6559 5LN01SP N-Channel Silicon MOSFET 5LN01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2180 2.5V drive. [5LN01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Source 2 Drain 3 Gate Specifications 3.0 3.8nom SANYO SPA Absolute Maximum Ratings at Ta=25 C