5LN01SP Todos los transistores

 

5LN01SP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 5LN01SP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 4.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.8 Ohm

Encapsulados: SPA

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5LN01SP datasheet

 ..1. Size:97K  sanyo
5ln01sp.pdf pdf_icon

5LN01SP

Ordering number ENN6559 5LN01SP N-Channel Silicon MOSFET 5LN01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2180 2.5V drive. [5LN01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Source 2 Drain 3 Gate Specifications 3.0 3.8nom SANYO SPA Absolute Maximum Ratings at Ta=25 C

 8.1. Size:250K  sanyo
5ln01ss.pdf pdf_icon

5LN01SP

Ordering number EN6560A 5LN01SS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01SS Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS

 8.2. Size:36K  sanyo
5ln01s.pdf pdf_icon

5LN01SP

Ordering number EN6561A 5LN01S SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS 10

 9.1. Size:249K  sanyo
5ln01c.pdf pdf_icon

5LN01SP

Ordering number EN6555A 5LN01C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01C Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS 10

Otros transistores... 3LN01C , 3LN01M , 3LN01S , 3LP01C , 3LP01M , 3LP01S , 5LN01C , 5LN01M , IRF3710 , 5LN01SS , 5LP01M , ATP101 , ATP102 , ATP103 , ATP104 , ATP106 , ATP107 .

History: ATP114 | IRFBC20

 

 

 


 
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