Справочник MOSFET. 5LN01SP

 

5LN01SP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 5LN01SP
   Маркировка: YB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 1.57 nC
   trⓘ - Время нарастания: 42 ns
   Cossⓘ - Выходная емкость: 4.7 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7.8 Ohm
   Тип корпуса: SPA

 Аналог (замена) для 5LN01SP

 

 

5LN01SP Datasheet (PDF)

 ..1. Size:97K  sanyo
 5ln01sp.pdf

5LN01SP 5LN01SP

Ordering number : ENN65595LN01SPN-Channel Silicon MOSFET5LN01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[5LN01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : GateSpecifications3.03.8nomSANYO : SPAAbsolute Maximum Ratings at Ta=25C

 8.1. Size:250K  sanyo
 5ln01ss.pdf

5LN01SP 5LN01SP

Ordering number : EN6560A5LN01SSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01SSApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS

 8.2. Size:36K  sanyo
 5ln01s.pdf

5LN01SP 5LN01SP

Ordering number : EN6561A5LN01SSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10

 9.1. Size:249K  sanyo
 5ln01c.pdf

5LN01SP 5LN01SP

Ordering number : EN6555A5LN01CSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01CApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10

 9.2. Size:27K  sanyo
 5ln01n.pdf

5LN01SP 5LN01SP

Ordering number : ENN65585LN01NN-Channel Silicon MOSFET5LN01NUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive.[5LN01N]5.04.04.00.450.50.440.451 : Source1 2 32 : Drain3 : GateSpecifications1.3 1.3 SANYO : NPAbsolute Maximum Ratings at Ta=25CParameter

 9.3. Size:250K  sanyo
 5ln01m.pdf

5LN01SP 5LN01SP

Ordering number : EN6137A5LN01MSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01MApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10

 9.4. Size:253K  onsemi
 5ln01m.pdf

5LN01SP 5LN01SP

Ordering number : EN6137C5LN01MN-Channel Small Signal MOSFEThttp://onsemi.com50V, 0.1A, 7.8 , Single MCPFeatures Low ON-resistance Ultrahigh-speed switching 1.5V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS 50 VGate to Source Voltage VGSS 10 VDrain Current (DC) ID 0.1 AD

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