5LN01SS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 5LN01SS
Código: YB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.4 V
Qgⓘ - Carga de la puerta: 1.57 nC
trⓘ - Tiempo de subida: 42 nS
Cossⓘ - Capacitancia de salida: 4.7 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.8 Ohm
Paquete / Cubierta: SSFP
Búsqueda de reemplazo de 5LN01SS MOSFET
5LN01SS Datasheet (PDF)
5ln01ss.pdf

Ordering number : EN6560A5LN01SSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01SSApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS
5ln01s.pdf

Ordering number : EN6561A5LN01SSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10
5ln01sp.pdf

Ordering number : ENN65595LN01SPN-Channel Silicon MOSFET5LN01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[5LN01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : GateSpecifications3.03.8nomSANYO : SPAAbsolute Maximum Ratings at Ta=25C
5ln01c.pdf

Ordering number : EN6555A5LN01CSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01CApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FQT1N80
History: FQT1N80



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