5LP01M Todos los transistores

 

5LP01M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 5LP01M

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.07 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 4.2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 23 Ohm

Encapsulados: MCP

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5LP01M datasheet

 ..1. Size:250K  sanyo
5lp01m.pdf pdf_icon

5LP01M

Ordering number EN6135A 5LP01M SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 5LP01M General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 V Gate-to-Source Voltage VGSS

 9.1. Size:27K  sanyo
5lp01n.pdf pdf_icon

5LP01M

Ordering number ENN6620 5LP01N P-Channel Silicon MOSFET 5LP01N Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2178 2.5V drive. [5LP01N] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Source 2 Drain 3 Gate Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta=25 C Paramete

 9.2. Size:36K  sanyo
5lp01c.pdf pdf_icon

5LP01M

Ordering number EN6619A 5LP01C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 5LP01C Applications Features Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 V Gate-to-Source Voltage VGSS 10 V

 9.3. Size:37K  sanyo
5lp01s.pdf pdf_icon

5LP01M

Ordering number EN6666A 5LP01S SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 5LP01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 V Gate-to-Source Voltage VGSS

Otros transistores... 3LN01S , 3LP01C , 3LP01M , 3LP01S , 5LN01C , 5LN01M , 5LN01SP , 5LN01SS , AON6414A , ATP101 , ATP102 , ATP103 , ATP104 , ATP106 , ATP107 , ATP108 , ATP112 .

 

 

 


 
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