5LP01M Todos los transistores

 

5LP01M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 5LP01M
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.07 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 4.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 23 Ohm
   Paquete / Cubierta: MCP
 

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5LP01M Datasheet (PDF)

 ..1. Size:250K  sanyo
 5lp01m.pdf pdf_icon

5LP01M

Ordering number : EN6135A5LP01MSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFET5LP01MGeneral-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS

 9.1. Size:27K  sanyo
 5lp01n.pdf pdf_icon

5LP01M

Ordering number : ENN66205LP01NP-Channel Silicon MOSFET5LP01NUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive.[5LP01N]5.04.04.00.450.50.440.451 2 31 : Source2 : Drain3 : GateSpecifications1.3 1.3SANYO : NPAbsolute Maximum Ratings at Ta=25CParamete

 9.2. Size:36K  sanyo
 5lp01c.pdf pdf_icon

5LP01M

Ordering number : EN6619A5LP01CSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device5LP01CApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS 10 V

 9.3. Size:37K  sanyo
 5lp01s.pdf pdf_icon

5LP01M

Ordering number : EN6666A5LP01SSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device5LP01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS

MOSTRAR MÁS

Otros transistores... 3LN01S , 3LP01C , 3LP01M , 3LP01S , 5LN01C , 5LN01M , 5LN01SP , 5LN01SS , IRFB4110 , ATP101 , ATP102 , ATP103 , ATP104 , ATP106 , ATP107 , ATP108 , ATP112 .

History: SRT04N037L | 2N7272R

 

 
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