ATP101 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ATP101
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: ATPAK
Búsqueda de reemplazo de ATP101 MOSFET
ATP101 Datasheet (PDF)
atp101.pdf

ATP101Ordering number : ENA1646SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP101ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
atp101.pdf

Ordering number : ENA1646AATP101P-Channel Power MOSFEThttp://onsemi.com 30V, 25A, 30m , Single ATPAKFeatures Low ON-resistance Large current Slim package 4.5V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 V
atp107.pdf

ATP107Ordering number : ENA1603SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP107ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
atp104.pdf

ATP104Ordering number : ENA1406SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP104ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
Otros transistores... 3LP01C , 3LP01M , 3LP01S , 5LN01C , 5LN01M , 5LN01SP , 5LN01SS , 5LP01M , IRFP250N , ATP102 , ATP103 , ATP104 , ATP106 , ATP107 , ATP108 , ATP112 , ATP113 .
History: 5LP01M | SRT04N037L | 2N7272R
History: 5LP01M | SRT04N037L | 2N7272R



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMTLA3134K | JMTLA2N7002KS | JMTL850P04A | JMTL400N04A | JMTL3N10A | JMTL3416KS | JMTL3415KL | JMTL3407A | JMTL3406A | JMTL3404B | JMTL3404A | JMTL3402A | JMTL3401B | JMTL3400L | JMTL3400A | JMTC80N06A
Popular searches
2sb681 | bc639 equivalent | bd138 transistor equivalent | c1096 transistor | c1345 transistor | jcs640c | kn2907a | ncep028n85 datasheet