ATP103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ATP103

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 55 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 47 nC

Resistencia drenaje-fuente RDS(on): 0.01 Ohm

Empaquetado / Estuche: ATPAK

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ATP103 Datasheet (PDF)

1.1. atp103.pdf Size:469K _sanyo

ATP103 Ordering number : ENA1623 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP103 Applications Features � Low ON-resistance. � Large current. � Slim package. � 4.5V drive. � Halogen free compliance. Specifications at Ta=25�C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

5.1. atp102.pdf Size:268K _sanyo

ATP102 Ordering number : ENA1479 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP102 Applications Features � Low ON-resistance. � Large current. � Slim package. � 4.5V drive. � Halogen free compliance. Specifications at Ta=25�C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

5.2. atp108.pdf Size:469K _sanyo

ATP108 Ordering number : ENA1604 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP108 Applications Features � Low ON-resistance. � Large current. � Slim package. � 4.5V drive. � Halogen free compliance. Specifications at Ta=25�C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-

5.3. atp104.pdf Size:268K _sanyo

ATP104 Ordering number : ENA1406 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP104 Applications Features � Low ON-resistance. � Large current. � Slim package. � 4.5V drive. � Halogen free compliance. Specifications at Ta=25�C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

5.4. atp106.pdf Size:470K _sanyo

ATP106 Ordering number : ENA1597 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP106 Applications Features � Low ON-resistance. � Large current. � Slim package. � 4.5V drive. � Halogen free compliance. Specifications at Ta=25�C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-

5.5. atp107.pdf Size:469K _sanyo

ATP107 Ordering number : ENA1603 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP107 Applications Features � Low ON-resistance. � Large current. � Slim package. � 4.5V drive. � Halogen free compliance. Specifications at Ta=25�C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-

5.6. atp101.pdf Size:467K _sanyo

ATP101 Ordering number : ENA1646 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP101 Applications Features � Low ON-resistance. � Large current. � Slim package. � 4.5V drive. � Halogen free compliance. Specifications at Ta=25�C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

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