ATP103 Todos los transistores

 

ATP103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ATP103
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 400 nS
   Cossⓘ - Capacitancia de salida: 555 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: ATPAK
     - Selección de transistores por parámetros

 

ATP103 Datasheet (PDF)

 ..1. Size:469K  sanyo
 atp103.pdf pdf_icon

ATP103

ATP103Ordering number : ENA1623SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP103ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.1. Size:469K  sanyo
 atp107.pdf pdf_icon

ATP103

ATP107Ordering number : ENA1603SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP107ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.2. Size:467K  sanyo
 atp101.pdf pdf_icon

ATP103

ATP101Ordering number : ENA1646SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP101ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.3. Size:268K  sanyo
 atp104.pdf pdf_icon

ATP103

ATP104Ordering number : ENA1406SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP104ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

MOSTRAR MÁS

Otros transistores... 3LP01S , 5LN01C , 5LN01M , 5LN01SP , 5LN01SS , 5LP01M , ATP101 , ATP102 , IRFB4115 , ATP104 , ATP106 , ATP107 , ATP108 , ATP112 , ATP113 , ATP114 , ATP201 .

History: HM70P03K | IPD079N06L3G | BSC096N10LS5 | 2SJ609 | PE528BA | 2SK630 | CSD17575Q3

 

 
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