ATP106 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ATP106

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: ATPAK

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ATP106 datasheet

 ..1. Size:470K  sanyo
atp106.pdf pdf_icon

ATP106

ATP106 Ordering number ENA1597 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP106 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 9.1. Size:469K  sanyo
atp107.pdf pdf_icon

ATP106

ATP107 Ordering number ENA1603 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP107 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 9.2. Size:467K  sanyo
atp101.pdf pdf_icon

ATP106

ATP101 Ordering number ENA1646 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP101 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 9.3. Size:268K  sanyo
atp104.pdf pdf_icon

ATP106

ATP104 Ordering number ENA1406 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP104 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

Otros transistores... 5LN01M, 5LN01SP, 5LN01SS, 5LP01M, ATP101, ATP102, ATP103, ATP104, 7N65, ATP107, ATP108, ATP112, ATP113, ATP114, ATP201, ATP202, ATP203