ATP108 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ATP108
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 340 nS
Cossⓘ - Capacitancia de salida: 560 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0104 Ohm
Paquete / Cubierta: ATPAK
Búsqueda de reemplazo de ATP108 MOSFET
ATP108 Datasheet (PDF)
atp108.pdf
ATP108Ordering number : ENA1604SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP108ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
atp108.pdf
Ordering number : ENA1604AATP108P-Channel Power MOSFEThttp://onsemi.com 40V, 70A, 10.4m , Single ATPAKFeatures Low ON-resistance Large current Slim package 4.5V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --40
atp107.pdf
ATP107Ordering number : ENA1603SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP107ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
atp101.pdf
ATP101Ordering number : ENA1646SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP101ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
Otros transistores... 5LN01SS , 5LP01M , ATP101 , ATP102 , ATP103 , ATP104 , ATP106 , ATP107 , IRF9540 , ATP112 , ATP113 , ATP114 , ATP201 , ATP202 , ATP203 , ATP204 , ATP206 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGMS5N50D | AGML315ME | AGMH70N90H | AGMH70N90C | AGMH70N70D | AGMH70N70C | AGMH614H | AGMH614D | AGMH614C | AGMH612D | AGMH6080H | AGMH606H | AGMH606C | AGMH605C | AGMH403A1 | AGM308MBP
Popular searches
kn2907a | ncep028n85 datasheet | sw50n06 | 2sa1232 | 2sc1940 | ftp08n06a | 2n3405 | 2n3567

