Справочник MOSFET. ATP108

 

ATP108 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ATP108
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 79.5 nC
   trⓘ - Время нарастания: 340 ns
   Cossⓘ - Выходная емкость: 560 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0104 Ohm
   Тип корпуса: ATPAK

 Аналог (замена) для ATP108

 

 

ATP108 Datasheet (PDF)

 ..1. Size:469K  sanyo
atp108.pdf

ATP108
ATP108

ATP108Ordering number : ENA1604SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP108ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 ..2. Size:346K  onsemi
atp108.pdf

ATP108
ATP108

Ordering number : ENA1604AATP108P-Channel Power MOSFEThttp://onsemi.com 40V, 70A, 10.4m , Single ATPAKFeatures Low ON-resistance Large current Slim package 4.5V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --40

 9.1. Size:469K  sanyo
atp107.pdf

ATP108
ATP108

ATP107Ordering number : ENA1603SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP107ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.2. Size:467K  sanyo
atp101.pdf

ATP108
ATP108

ATP101Ordering number : ENA1646SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP101ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.3. Size:268K  sanyo
atp104.pdf

ATP108
ATP108

ATP104Ordering number : ENA1406SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP104ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.4. Size:469K  sanyo
atp103.pdf

ATP108
ATP108

ATP103Ordering number : ENA1623SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP103ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.5. Size:268K  sanyo
atp102.pdf

ATP108
ATP108

ATP102Ordering number : ENA1479SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP102ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.6. Size:470K  sanyo
atp106.pdf

ATP108
ATP108

ATP106Ordering number : ENA1597SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP106ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.7. Size:344K  onsemi
atp101.pdf

ATP108
ATP108

Ordering number : ENA1646AATP101P-Channel Power MOSFEThttp://onsemi.com 30V, 25A, 30m , Single ATPAKFeatures Low ON-resistance Large current Slim package 4.5V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 V

Другие MOSFET... 5LN01SS , 5LP01M , ATP101 , ATP102 , ATP103 , ATP104 , ATP106 , ATP107 , IRLB4132 , ATP112 , ATP113 , ATP114 , ATP201 , ATP202 , ATP203 , ATP204 , ATP206 .

 

 
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