ATP201 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ATP201
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 230 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Paquete / Cubierta: ATPAK
Búsqueda de reemplazo de ATP201 MOSFET
ATP201 PDF Specs
atp201.pdf
ATP201 Ordering number ENA1547 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP201 Applications Features Low ON-resistance. 4.5V drive. Slim package. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Sourc... See More ⇒
atp202.pdf
ATP202 Ordering number ENA1317 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP202 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS... See More ⇒
atp204.pdf
ATP204 Ordering number ENA1551 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP204 Applications Features Low ON-resistance. 4.5V drive. Large current. Slim package. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS... See More ⇒
atp208.pdf
ATP208 Ordering number ENA1396A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP208 Applications Features Low ON-resistance Large current 4.5V drive Slim package Halogen free compliance Protection diode in Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drai... See More ⇒
Otros transistores... ATP103 , ATP104 , ATP106 , ATP107 , ATP108 , ATP112 , ATP113 , ATP114 , STP75NF75 , ATP202 , ATP203 , ATP204 , ATP206 , ATP207 , ATP208 , ATP212 , ATP213 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP6007S | AP5N50K | AP5N20K | AP5N10S | AP5N10M | AP50P20Q | AP50P20K | AP50P06K | AP50N06K | AP50N04QD | AP50N04Q | AP50N04K | AP50N04GD | AP5040QD | AP4946S | AP4847
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