All MOSFET. ATP201 Datasheet

 

ATP201 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ATP201
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 230 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: ATPAK

 ATP201 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ATP201 Datasheet (PDF)

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