ATP207 Todos los transistores

 

ATP207 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ATP207

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 65 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 54 nC

Resistencia drenaje-fuente RDS(on): 0.007 Ohm

Empaquetado / Estuche: ATPAK

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ATP207 Datasheet (PDF)

1.1. atp207.pdf Size:443K _sanyo

ATP207
ATP207

ATP207 Ordering number : ENA1319A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP207 Applications Features • Low ON-resistance • Large current • 4.5V drive • Slim package • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drai

5.1. atp202.pdf Size:267K _sanyo

ATP207
ATP207

ATP202 Ordering number : ENA1317 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP202 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to

5.2. atp206.pdf Size:444K _sanyo

ATP207
ATP207

ATP206 Ordering number : ENA1395A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP206 Applications Features • Low ON-resistance • Large current • 4.5V drive • Slim package • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drai

 5.3. atp203.pdf Size:267K _sanyo

ATP207
ATP207

ATP203 Ordering number : ENA1318 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP203 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to

5.4. atp208.pdf Size:445K _sanyo

ATP207
ATP207

ATP208 Ordering number : ENA1396A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP208 Applications Features • Low ON-resistance • Large current • 4.5V drive • Slim package • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drai

 5.5. atp201.pdf Size:268K _sanyo

ATP207
ATP207

ATP201 Ordering number : ENA1547 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP201 Applications Features Low ON-resistance. 4.5V drive. Slim package. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VG

5.6. atp204.pdf Size:268K _sanyo

ATP207
ATP207

ATP204 Ordering number : ENA1551 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP204 Applications Features Low ON-resistance. 4.5V drive. Large current. Slim package. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to

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