Справочник MOSFET. ATP207

 

ATP207 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ATP207
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 290 ns
   Cossⓘ - Выходная емкость: 330 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0091 Ohm
   Тип корпуса: ATPAK

 Аналог (замена) для ATP207

 

 

ATP207 Datasheet (PDF)

 ..1. Size:443K  sanyo
 atp207.pdf

ATP207 ATP207

ATP207Ordering number : ENA1319ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP207ApplicationsFeatures Low ON-resistance Large current 4.5V drive Slim package Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai

 9.1. Size:267K  sanyo
 atp202.pdf

ATP207 ATP207

ATP202Ordering number : ENA1317SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP202ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.2. Size:268K  sanyo
 atp204.pdf

ATP207 ATP207

ATP204Ordering number : ENA1551SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP204ApplicationsFeatures Low ON-resistance. 4.5V drive. Large current. Slim package. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.3. Size:445K  sanyo
 atp208.pdf

ATP207 ATP207

ATP208Ordering number : ENA1396ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP208ApplicationsFeatures Low ON-resistance Large current 4.5V drive Slim package Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai

 9.4. Size:267K  sanyo
 atp203.pdf

ATP207 ATP207

ATP203Ordering number : ENA1318SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP203ApplicationsFeatures Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 9.5. Size:268K  sanyo
 atp201.pdf

ATP207 ATP207

ATP201Ordering number : ENA1547SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP201ApplicationsFeatures Low ON-resistance. 4.5V drive. Slim package. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sourc

 9.6. Size:444K  sanyo
 atp206.pdf

ATP207 ATP207

ATP206Ordering number : ENA1395ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP206ApplicationsFeatures Low ON-resistance Large current 4.5V drive Slim package Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai

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