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2SK899 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK899

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente |Vds|: 500 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Tiempo de encendido (ton): 130 nS

Conductancia de drenaje-sustrato (Cd): 330 pF

Resistencia drenaje-fuente RDS(on): 0.33 Ohm

Empaquetado / Estuche: TO3P

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2SK899 Datasheet (PDF)

0.1. 2sk899.pdf Size:168K _1

2SK899
2SK899

0.2. 2sk899.pdf Size:234K _inchange_semiconductor

2SK899
2SK899

isc N-Channel MOSFET Transistor 2SK899DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 9.1. 2sk897-mr.pdf Size:134K _1

2SK899
2SK899

9.2. 2sk891.pdf Size:53K _toshiba

2SK899
2SK899

 9.3. 2sk890.pdf Size:87K _toshiba

2SK899
2SK899

www.DataSheet4U.com

9.4. 2sk894.pdf Size:57K _toshiba

2SK899
2SK899

 9.5. 2sk897-m.pdf Size:137K _fuji

2SK899
2SK899

"2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003

9.6. 2sk894.pdf Size:198K _inchange_semiconductor

2SK899
2SK899

isc N-Channel MOSFET Transistor 2SK894DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage.high speed power Switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vo

9.7. 2sk892.pdf Size:59K _inchange_semiconductor

2SK899
2SK899

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK892 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM R

9.8. 2sk893.pdf Size:59K _inchange_semiconductor

2SK899
2SK899

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK893 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS High voltage. high speed power Switching. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GSV G

Otros transistores... 2SK799 , 2SK801 , 2SK802 , 2SK814 , 2SK875 , 2SK876 , 2SK897 , 2SK897-MR , IRFZ24N , 2SK900 , 2SK901 , 2SK902 , 2SK903 , 2SK904 , 2SK905 , 2SK906 , 2SK928 .

 

 
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