ATP218 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ATP218
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 60 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 100 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.0029 Ohm
Empaquetado / Estuche: ATPAK
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ATP218 Datasheet (PDF)
1.1. atp218.pdf 
Size:393K _sanyo
ATP218 Ordering number : EN8970 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP218 Applications Features ON-resistance RDS(on)1=2.9m (typ.) Input Capacitance Ciss=6600pF(typ.) ? 2.5V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Vol
5.1. atp212.pdf Size:446K _sanyo
ATP212 Ordering number : ENA1507A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP212 Applications Features • Low ON-resistance • Large current • 4V drive • Slim package • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-
5.2. atp213.pdf Size:445K _sanyo
ATP213 Ordering number : ENA1526A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP213 Applications Features • Low ON-resistance • Large current • 4V drive • Slim package • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-
5.3. atp216.pdf Size:394K _sanyo
ATP216 Ordering number : EN8985 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP216 Applications Features ON-resistance RDS(on)1=17m (typ.) Slim package ? 1.8V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-
5.4. atp214.pdf Size:476K _sanyo
ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP214 Applications Features • ON-resistance RDS(on)1=6.2m (typ.) • Input Capacitance Ciss=4850pF(typ.) Ω • 4V drive • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Condit
Otros transistores... ATP204 , ATP206 , ATP207 , ATP208 , ATP212 , ATP213 , ATP214 , ATP216 , 2SK2996 , ATP301 , ATP302 , ATP404 , ATP405 , ATP602 , ATP613 , BBS3002 , BFL4001 .
