ATP218 Todos los transistores

 

ATP218 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ATP218

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0029 Ohm

Empaquetado / Estuche: ATPAK

Búsqueda de reemplazo de MOSFET ATP218

 

ATP218 Datasheet (PDF)

1.1. atp218.pdf Size:393K _sanyo

ATP218
ATP218

ATP218 Ordering number : EN8970 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP218 Applications Features ON-resistance RDS(on)1=2.9m (typ.) Input Capacitance Ciss=6600pF(typ.) ? 2.5V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Vol

5.1. atp216.pdf Size:394K _sanyo

ATP218
ATP218

ATP216 Ordering number : EN8985 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP216 Applications Features ON-resistance RDS(on)1=17m (typ.) Slim package ? 1.8V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-

5.2. atp213.pdf Size:445K _sanyo

ATP218
ATP218

ATP213 Ordering number : ENA1526A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP213 Applications Features • Low ON-resistance • Large current • 4V drive • Slim package • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-

 5.3. atp214.pdf Size:476K _sanyo

ATP218
ATP218

ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP214 Applications Features • ON-resistance RDS(on)1=6.2m (typ.) • Input Capacitance Ciss=4850pF(typ.) Ω • 4V drive • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Condit

5.4. atp212.pdf Size:446K _sanyo

ATP218
ATP218

ATP212 Ordering number : ENA1507A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP212 Applications Features • Low ON-resistance • Large current • 4V drive • Slim package • Halogen free compliance • Protection diode in Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-

Otros transistores... ATP204 , ATP206 , ATP207 , ATP208 , ATP212 , ATP213 , ATP214 , ATP216 , 2SK2996 , ATP301 , ATP302 , ATP404 , ATP405 , ATP602 , ATP613 , BBS3002 , BFL4001 .

 

 
Back to Top

 


ATP218
  ATP218
  ATP218
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: GSM2306AE | GSM2306A | GSM2304S | GSM2304AS | GSM2304A | GSM2304 | GSM2303A | GSM2303 | GSM2302S | GSM2302AS | GSM2301S | GSM2301AS | GSM2301A | GSM2301 | GSM2014 |

 

 

 
Back to Top