BFL4007 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BFL4007Ordering number : ENA1689SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4007ApplicationsFeatures Reverse recovery time trr=95ns (typ) ON-resistance RDS(on)=0.52 (typ) Input capacitance Ciss=1200pF (typ) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings

BFL4004Ordering number : ENA1796SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4004ApplicationsFeatures ON-resistance RDS(on)=1.9 (typ.) Input capacitance Ciss=710pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 800 VG

BFL4001Ordering number : ENA1638BSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4001ApplicationsFeatures ON-resistance RDS(on)=2.1 (typ.) Input capacitance Ciss=850pF (typ.) 10V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900 VG

BFL4036Ordering number : ENA1830SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4036ApplicationsFeatures ON-resistance RDS(on)=0.4 (typ.) Input capacitance Ciss=1000pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V

BFL4026Ordering number : ENA1797SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4026ApplicationsFeatures ON-resistance RDS(on)=2.8 (typ.) Input capacitance Ciss=650pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900 VG

BFL4037Ordering number : ENA1831SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4037ApplicationsFeatures ON-resistance RDS(on)=0.33 (typ.) Input capacitance Ciss=1200pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V

Ordering number : ENA1797ABFL4026N-Channel Power MOSFEThttp://onsemi.com900V, 5A, 3.6 , TO-220F-3FSFeatures ON-resistance RDS(on)=2.8 (typ.) Input capacitance Ciss=650pF (typ.) 10V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900 VGate-to-Source Voltage VGSS 30 VIDc*1

isc N-Channel MOSFET Transistor BFL4026FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR