BFL4007 - описание и поиск аналогов

BFL4007 Ordering number ENA1689 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device BFL4007 Applications Features Reverse recovery time trr=95ns (typ) ON-resistance RDS(on)=0.52 (typ) Input capacitance Ciss=1200pF (typ) 10V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings

BFL4004 Ordering number ENA1796 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device BFL4004 Applications Features ON-resistance RDS(on)=1.9 (typ.) Input capacitance Ciss=710pF (typ.) 10V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 800 V G

BFL4001 Ordering number ENA1638B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device BFL4001 Applications Features ON-resistance RDS(on)=2.1 (typ.) Input capacitance Ciss=850pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V G

BFL4036 Ordering number ENA1830 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device BFL4036 Applications Features ON-resistance RDS(on)=0.4 (typ.) Input capacitance Ciss=1000pF (typ.) 10V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V

BFL4026 Ordering number ENA1797 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device BFL4026 Applications Features ON-resistance RDS(on)=2.8 (typ.) Input capacitance Ciss=650pF (typ.) 10V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V G

BFL4037 Ordering number ENA1831 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device BFL4037 Applications Features ON-resistance RDS(on)=0.33 (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V

Ordering number ENA1797A BFL4026 N-Channel Power MOSFET http //onsemi.com 900V, 5A, 3.6 , TO-220F-3FS Features ON-resistance RDS(on)=2.8 (typ.) Input capacitance Ciss=650pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS 30 V IDc*1

isc N-Channel MOSFET Transistor BFL4026 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR