Справочник MOSFET. BFL4007

 

BFL4007 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BFL4007
   Маркировка: FL4007
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 46 nC
   trⓘ - Время нарастания: 72 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.68 Ohm
   Тип корпуса: TO220FI

 Аналог (замена) для BFL4007

 

 

BFL4007 Datasheet (PDF)

 ..1. Size:305K  sanyo
 bfl4007 blf4007.pdf

BFL4007 BFL4007

BFL4007Ordering number : ENA1689SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4007ApplicationsFeatures Reverse recovery time trr=95ns (typ) ON-resistance RDS(on)=0.52 (typ) Input capacitance Ciss=1200pF (typ) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings

 8.1. Size:314K  sanyo
 bfl4004.pdf

BFL4007 BFL4007

BFL4004Ordering number : ENA1796SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4004ApplicationsFeatures ON-resistance RDS(on)=1.9 (typ.) Input capacitance Ciss=710pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 800 VG

 8.2. Size:354K  sanyo
 bfl4001.pdf

BFL4007 BFL4007

BFL4001Ordering number : ENA1638BSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4001ApplicationsFeatures ON-resistance RDS(on)=2.1 (typ.) Input capacitance Ciss=850pF (typ.) 10V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900 VG

 9.1. Size:324K  sanyo
 bfl4036.pdf

BFL4007 BFL4007

BFL4036Ordering number : ENA1830SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4036ApplicationsFeatures ON-resistance RDS(on)=0.4 (typ.) Input capacitance Ciss=1000pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V

 9.2. Size:315K  sanyo
 bfl4026.pdf

BFL4007 BFL4007

BFL4026Ordering number : ENA1797SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4026ApplicationsFeatures ON-resistance RDS(on)=2.8 (typ.) Input capacitance Ciss=650pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900 VG

 9.3. Size:324K  sanyo
 bfl4037.pdf

BFL4007 BFL4007

BFL4037Ordering number : ENA1831SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4037ApplicationsFeatures ON-resistance RDS(on)=0.33 (typ.) Input capacitance Ciss=1200pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V

 9.4. Size:278K  onsemi
 bfl4026.pdf

BFL4007 BFL4007

Ordering number : ENA1797ABFL4026N-Channel Power MOSFEThttp://onsemi.com900V, 5A, 3.6 , TO-220F-3FSFeatures ON-resistance RDS(on)=2.8 (typ.) Input capacitance Ciss=650pF (typ.) 10V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900 VGate-to-Source Voltage VGSS 30 VIDc*1

 9.5. Size:249K  inchange semiconductor
 bfl4026.pdf

BFL4007 BFL4007

isc N-Channel MOSFET Transistor BFL4026FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

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