ECH8419 Todos los transistores

 

ECH8419 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ECH8419
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: ECH8

 Búsqueda de reemplazo de MOSFET ECH8419

 

Principales características: ECH8419

 ..1. Size:345K  sanyo
 ech8419.pdf pdf_icon

ECH8419

ECH8419 Ordering number ENA1886 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8419 Applications Features ON-resistance RDS(on)1=13m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Sourc

 8.1. Size:286K  sanyo
 ech8410.pdf pdf_icon

ECH8419

ECH8410 Ordering number ENA1331 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8410 Applications Features Low ON-resistance. 4V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20

 8.2. Size:33K  sanyo
 ech8411.pdf pdf_icon

ECH8419

Ordering number ENA0073 ECH8411 N-Channel Silicon MOSFET General-Purpose Switching Device ECH8411 Applications Features Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC) ID 9 A Drain Current (Pulse) IDP

 9.1. Size:391K  1
 ech8420.pdf pdf_icon

ECH8419

ECH8420 Ordering number EN8993 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8420 General-Purpose Switching Device Applications Features ON-resistance RDS(on)1=5.2m (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source

MOSTRAR MÁS

Otros transistores... EC3A04B , EC4401C , ECH8308 , ECH8309 , ECH8310 , ECH8315 , ECH8320 , ECH8410 , IRFB7545 , ECH8601M , ECH8602M , ECH8649 , ECH8651R , ECH8652 , ECH8653 , ECH8654 , ECH8655R .

History: PHB130N03LT

 

 
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