ECH8652 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ECH8652
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 72 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: ECH8
Búsqueda de reemplazo de ECH8652 MOSFET
ECH8652 Datasheet (PDF)
ech8652.pdf

Ordering number : ENA0935ECH8652SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8652ApplicationsFeatures Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-S
ech8654.pdf

Ordering number : ENA0981ECH8654SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8654ApplicationsFeatures Low ON-resistance. 1.8V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS
ech8659.pdf

ECH8659Ordering number : ENA1224ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8659ApplicationsFeatures 4V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-So
ech8653.pdf

Ordering number : ENA0851 ECH8653SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8653ApplicationsFeatures Low ON-resistance. 4V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ra
Otros transistores... ECH8315 , ECH8320 , ECH8410 , ECH8419 , ECH8601M , ECH8602M , ECH8649 , ECH8651R , 2N7002 , ECH8653 , ECH8654 , ECH8655R , ECH8657 , ECH8659 , ECH8660 , ECH8661 , ECH8662 .
History: FDD8876 | BSS84N3 | BF993
History: FDD8876 | BSS84N3 | BF993



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