ECH8652 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ECH8652
Маркировка: WX
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 11 nC
trⓘ - Время нарастания: 72 ns
Cossⓘ - Выходная емкость: 320 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: ECH8
ECH8652 Datasheet (PDF)
ech8652.pdf
Ordering number : ENA0935ECH8652SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8652ApplicationsFeatures Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-S
ech8654.pdf
Ordering number : ENA0981ECH8654SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8654ApplicationsFeatures Low ON-resistance. 1.8V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS
ech8659.pdf
ECH8659Ordering number : ENA1224ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8659ApplicationsFeatures 4V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-So
ech8653.pdf
Ordering number : ENA0851 ECH8653SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8653ApplicationsFeatures Low ON-resistance. 4V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ra
ech8651r.pdf
Ordering number : ENA1010 ECH8651RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8651RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings
ech8655r.pdf
Ordering number : ENA1011 ECH8655RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8655RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings
ech8657.pdf
ECH8657Ordering number : ENA1710ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8657ApplicationsFeatures 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID
ech8656.pdf
ECH8656Ordering number : EN9010SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8656ApplicationsFeatures ON-resistance RDS(on)1=13m (typ.) 1.8V drive Halogen free compliance Nch + Nch MOSFET Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings Unit
ech8651r.pdf
Ordering number : ENA1010AECH8651RN-Channel Power MOSFEThttp://onsemi.com24V, 10A, 14m , Dual ECH8Features Low ON-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParame
ech8657.pdf
Ordering number : ENA1710BECH8657N-Channel Power MOSFEThttp://onsemi.com35V, 4.5A, 59m , Dual ECH8Features 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 4.5 ADrain Curre
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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