2N6768 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N6768
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 120 nC
   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO204

Búsqueda de reemplazo de MOSFET 2N6768

2N6768 Datasheet (PDF)

..1. Size:140K 1
2n6768.pdf

..2. Size:144K international rectifier
2n6768 irf350.pdf

PD - 90339FIRF350REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768HEXFETTRANSISTORS JANTXV2N6768THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF350 400V 0.300 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

..3. Size:64K omnirel
2n6764 2n6766 2n6768 2n6770.pdf

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,QUALIFIED TO MIL-PRF-19500/543100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/543DESCRIPTION

9.1. Size:142K 1
2n6766.pdf

9.2. Size:140K 1
2n6764.pdf

9.3. Size:146K international rectifier
2n6762 irf430.pdf

PD - 90336FIRF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762HEXFETTRANSISTORS JANTXV2N6762THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF430 500V 1.5 4.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

9.4. Size:146K international rectifier
2n6760 irf330.pdf

PD - 90335FIRF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760HEXFETTRANSISTORS JANTXV2N6760THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF330 400V 1.00 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

9.5. Size:145K international rectifier
2n6766 irf250.pdf

PD - 90338EIRF250REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766HEXFETTRANSISTORS JANTXV2N6766THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF250 200V 0.085 30AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-3The efficient geometry and unique

9.6. Size:140K fairchild semi
2n6763.pdf