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2N6768 Spec and Replacement


   Type Designator: 2N6768
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO204

 2N6768 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6768 Specs

 ..1. Size:140K  1
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2N6768

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 ..2. Size:144K  international rectifier
2n6768 irf350.pdf pdf_icon

2N6768

PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒

 ..3. Size:64K  omnirel
2n6764 2n6766 2n6768 2n6770.pdf pdf_icon

2N6768

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/543 DESCRIPTION... See More ⇒

 9.1. Size:142K  1
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2N6768

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Detailed specifications: 2N6765 , 2N6766 , 2N6766JAN , 2N6766JANTX , 2N6766JANTXV , 2N6766JTX , 2N6766JTXV , 2N6767 , P60NF06 , 2N6768JAN , 2N6768JANTX , 2N6768JANTXV , 2N6768JTX , 2N6768JTXV , 2N6769 , 2N6770 , 2N6770JANTX .

History: 2N6766JTXV

Keywords - 2N6768 MOSFET specs

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