EMH2409 Todos los transistores

 

EMH2409 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: EMH2409
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.059 Ohm
   Paquete / Cubierta: EMH8
 

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EMH2409 Datasheet (PDF)

 ..1. Size:346K  sanyo
emh2409.pdf pdf_icon

EMH2409

EMH2409Ordering number : ENA1890SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2409ApplicationsFeatures The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute

 8.1. Size:307K  sanyo
emh2408.pdf pdf_icon

EMH2409

Ordering number : ENA1170 EMH2408SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2408ApplicationsFeatures The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,thereby enabling high-density mounting. 1.8V drive. Halogen free cpmpliance.SpecificationsAbsolute Maximum Ra

 8.2. Size:306K  sanyo
emh2407.pdf pdf_icon

EMH2409

Ordering number : ENA1141B EMH2407SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2407ApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source

 9.1. Size:57K  philips
pemh24 pumh24.pdf pdf_icon

EMH2409

PEMH24; PUMH24NPN/NPN resistor-equipped transistors;R1 = 100 k, R2 = 100 kRev. 04 18 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1: Product overviewType number Package NPN/PNP PNP/PNPcomplement complementPhilips JEITAPEMH24 SOT666 - PEMD24 PEMB24PUMH24 SOT363 SC-88 PUMD24 PUMB241.2 Feat

Otros transistores... ECH8673 , EFC4618R , EMH1303 , EMH1307 , EMH1405 , EMH2308 , EMH2407 , EMH2408 , IRF630 , EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 , FW707 , FW811 , FW812 .

History: NTD4965N | UTC50N06L | NTD4963N

 

 
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