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December 2010 J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable. J309 MMBFJ309 J310 MMBFJ310 G S SOT-23 G TO-92 Mark MMBFJ309

Discrete POWER & Signal Technologies J309 MMBFJ309 J310 MMBFJ310 G D G TO-92 S SOT-23 S D Mark 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbo

J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 -1 to -6.5 -25 8 12 J309 -1 to -4 -25 10 12 J310 -2 to -6.5 -25 8 24 SST308 -1 to -6.5 -25 8 12 SST309 -1 to -4 -25 10 12 SST310 -2 to -6.5 -25 8 24 U309 -1 to -4 -25 10 12 U310 -2.5 to -6 -25 10

J/SST/U308 Series N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 1 to 6.5 25 8 12 J309 1 to 4 25 10 12 J310 2 to 6.5 25 8 24 SST308 1 to 6.5 25 8 12 SST309 1 to 4 25 10 12 SST310 2 to 6.5 25 8 24 U309 1 to 4 25 10 12

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ309LT1/D JFET VHF/UHF Amplifier Transistor MMBFJ309LT1 N Channel 2 SOURCE MMBFJ310LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc CASE 318 08, STYLE 10 Gate Source Voltage VGS 25 Vdc SOT 23 (TO 236AB) Gate Current IG 10 mAdc THERMAL CHARACTERISTICS

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification 1996 Sep 11 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; N-channel silicon field-effect transistors PMBFJ310 FEATURES PINNING - SOT23 Low noise PIN SYMBOL DE

DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J308; J309; J310 FEATURES PINNING - TO-92 Low noise PIN SYMBOL DESCRIPTION Interchangea

J309 MMBFJ309 J310 MMBFJ310 G S G TO-92 S SOT-23 NOTE Source & Drain D D are interchangeable Mark 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Absolute Maximum Ratings* TA = 25 C unless otherwise noted

J309, J310 Preferred Device JFET VHF/UHF Amplifiers N-Channel Depletion Features http //onsemi.com Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Source Voltage VDS 25 Vdc GATE Gate -Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc 2 SOURCE Total Device Dissipation @ TA = 25 C PD 350 mW Derate above = 25 C 2.8 mW/

MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N-Channel http //onsemi.com Features 2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit 1 DRAIN Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc Gate Current IG 10 mAdc 3 SOT-23 (TO-236) THERMAL CHARACTERISTICS CASE 31

MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N-Channel http //onsemi.com Features 2 SOURCE Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC-Q101 Qualified and GATE PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 DRAIN Co