J310 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J310

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.4 W

Tensión drenaje-fuente |Vds|: 25 V

Corriente continua de drenaje |Id|: 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Voltaje de corte de la puerta |Vgs(off)|: -2 V

Resistencia drenaje-fuente RDS(on): 50 Ohm

Empaquetado / Estuche: TO92

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J310 Datasheet (PDF)

0.1. mmbfj309 mmbfj310.pdf Size:165K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ309LT1/DJFET VHF/UHF Amplifier TransistorMMBFJ309LT1N Channel2 SOURCEMMBFJ310LT13GATE1 DRAIN31MAXIMUM RATING

0.2. pmbfj308 pmbfj309 pmbfj310 2.pdf Size:68K _philips

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ308; PMBFJ309;PMBFJ310N-channel silicon field-effecttransistorsProduct specification 1996 Sep 11Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ308; PMBFJ309;N-channel silicon field-effect transistorsPMBFJ310FEATURES PINNING - SOT23 Low noisePIN SYMBOL DE

0.3. j308-j309-j310.pdf Size:96K _philips

DISCRETE SEMICONDUCTORSDATA SHEETJ308; J309; J310N-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J308; J309; J310FEATURES PINNING - TO-92 Low noisePIN SYMBOL DESCRIPTION Interchangea

0.4. mmbfj310.pdf Size:152K _fairchild_semi

J309 MMBFJ309J310 MMBFJ310GSG TO-92S SOT-23NOTE: Source & DrainDD are interchangeableMark: 6U / 6TN-Channel RF AmplifierThis device is designed for VHF/UHF amplifier, oscillator and mixerapplications. As a common gate amplifier, 16 dB at 100 MHz and12 dB at 450 MHz can be realized. Sourced from Process 92.Absolute Maximum Ratings* TA = 25C unless otherwise noted

0.5. j310.pdf Size:561K _fairchild_semi

Discrete POWER & SignalTechnologiesJ309 MMBFJ309J310 MMBFJ310GDG TO-92S SOT-23 SDMark: 6U / 6TN-Channel RF AmplifierThis device is designed for VHF/UHF amplifier, oscillator and mixerapplications. As a common gate amplifier, 16 dB at 100 MHz and12 dB at 450 MHz can be realized. Sourced from Process 92.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbo

0.6. j309 j310 mmbfj309 mmbfj310.pdf Size:207K _fairchild_semi

December 2010J309 / J310 / MMBFJ309 / MMBFJ310N-Channel RF AmplifierFeatures This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable.J309 MMBFJ309J310 MMBFJ310GSSOT-23G TO-92 Mark MMBFJ309

0.7. j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf Size:96K _vishay

J/SST/U308 SeriesVishay SiliconixN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 -1 to -6.5 -25 8 12J309 -1 to -4 -25 10 12J310 -2 to -6.5 -25 8 24SST308 -1 to -6.5 -25 8 12SST309 -1 to -4 -25 10 12SST310 -2 to -6.5 -25 8 24U309 -1 to -4 -25 10 12U310 -2.5 to -6 -25 10

0.8. cmpfj310.pdf Size:49K _central

0.9. j309g j310g.pdf Size:66K _onsemi

J309, J310Preferred Device JFET VHF/UHF AmplifiersN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Source Voltage VDS 25 VdcGATEGate -Source Voltage VGS 25 VdcForward Gate Current IGF 10 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/

0.10. mmbfj309lt1 mmbfj310lt1.pdf Size:144K _onsemi

MMBFJ309LT1G,MMBFJ310LT1GJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant3GATEMAXIMUM RATINGSRating Symbol Value Unit1 DRAINDrain-Source Voltage VDS 25 VdcGate-Source Voltage VGS 25 VdcGate Current IG 10 mAdc3SOT-23 (TO-236)THERMAL CHARACTERISTICS CASE 31

0.11. smmbfj310lt1g smmbfj310lt3g.pdf Size:101K _onsemi

MMBFJ309L, MMBFJ310L,SMMBFJ310LJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andGATEPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1 DRAINCo

0.12. j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf Size:98K _siliconix

J/SST/U308 SeriesN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310Product SummaryPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 1 to 6.5 25 8 12J309 1 to 4 25 10 12J310 2 to 6.5 25 8 24SST308 1 to 6.5 25 8 12SST309 1 to 4 25 10 12SST310 2 to 6.5 25 8 24U309 1 to 4 25 10 12

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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