J310 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: J310
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.4 W
Tensión drenaje-fuente (Vds): 25 V
Corriente continua de drenaje (Id): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 50 Ohm
Empaquetado / Estuche: TO92
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J310 Datasheet (PDF)
1.1. mmbfj309 mmbfj310.pdf 
Size:165K _motorola
M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M M B F J 3 0 9 L T 1 / D J F E T V H F / U H F A m p l i f i e r T r a n s i s t o r M M B F J 3 0 9 L T 1 N C h a n n e l 2 S O U R C E M M B F J 3 1 0 L T 1 3 G A T E 1 D R A I N 3 1 M A X I M U M R A T I N G
1.2. pmbfj308 pmbfj309 pmbfj310 2.pdf Size:68K _philips
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification 1996 Sep 11 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; N-channel silicon field-effect transistors PMBFJ310 FEATURES PINNING - SOT23 • Low noise PIN SYMBOL DE
1.3. j308-j309-j310.pdf Size:96K _philips
DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J308; J309; J310 FEATURES PINNING - TO-92 • Low noise PIN SYMBOL DESCRIPTION • Interchangea
1.4. mmbfj310.pdf Size:152K _fairchild_semi
J309 MMBFJ309 J310 MMBFJ310 G S G TO-92 S SOT-23 NOTE: Source & Drain D D are interchangeable Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Absolute Maximum Ratings* TA = 25°C unless otherwise noted
1.5. j310.pdf Size:561K _fairchild_semi
Discrete POWER & Signal Technologies J309 MMBFJ309 J310 MMBFJ310 G D G TO-92 S SOT-23 S D Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbo
1.6. j309 j310 mmbfj309 mmbfj310.pdf Size:207K _fairchild_semi
December 2010 J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. • As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. • Sourced from Process 92. • Source & Drain are interchangeable. J309 MMBFJ309 J310 MMBFJ310 G S SOT-23 G TO-92 Mark MMBFJ309
1.7. j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf Size:96K _vishay
J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 -1 to -6.5 -25 8 12 J309 -1 to -4 -25 10 12 J310 -2 to -6.5 -25 8 24 SST308 -1 to -6.5 -25 8 12 SST309 -1 to -4 -25 10 12 SST310 -2 to -6.5 -25 8 24 U309 -1 to -4 -25 10 12 U310 -2.5 to -6 -25 10
1.8. cmpfj310.pdf Size:49K _central
1.9. j309g j310g.pdf Size:66K _onsemi
J309, J310 Preferred Device JFET VHF/UHF Amplifiers N-Channel — Depletion Features http://onsemi.com • Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Source Voltage VDS 25 Vdc GATE Gate -Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc 2 SOURCE Total Device Dissipation @ TA = 25°C PD 350 mW Derate above = 25°C 2.8 mW/°
1.10. mmbfj309lt1 mmbfj310lt1.pdf Size:144K _onsemi
MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N-Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit 1 DRAIN Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc Gate Current IG 10 mAdc 3 SOT-23 (TO-236) THERMAL CHARACTERISTICS CASE 31
1.11. smmbfj310lt1g smmbfj310lt3g.pdf Size:101K _onsemi
MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N-Channel http://onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC-Q101 Qualified and GATE PPAP Capable • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 DRAIN Co
1.12. j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf Size:98K _siliconix
J/SST/U308 Series N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 –1 to –6.5 –25 8 12 J309 –1 to –4 –25 10 12 J310 –2 to –6.5 –25 8 24 SST308 –1 to –6.5 –25 8 12 SST309 –1 to –4 –25 10 12 SST310 –2 to –6.5 –25 8 24 U309 –1 to –4 –25 10 12
Otros transistores... FW274 , FW282 , FW707 , FW811 , FW812 , FW813 , FW906 , FW907 , IRF730 , MCH3374 , MCH3377 , MCH3383 , MCH3475 , MCH3477 , MCH3484 , MCH6320 , MCH6321 .
