MCH6341 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MCH6341 datasheet

..1. Size:64K sanyo
mch6341.pdf pdf_icon

Ordering number ENA1272 MCH6341 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6341 Applications Features Low ON-resistance. 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --5 A

8.1. Size:485K sanyo
mch6342.pdf pdf_icon

MCH6342 Ordering number ENA1553 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6342 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30

8.2. Size:342K sanyo
mch6344.pdf pdf_icon

MCH6344 Ordering number EN8934 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6344 Applications Features ON-resistance RDS(on)1=115m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sour

8.3. Size:673K onsemi
mch6344.pdf pdf_icon

MCH6344 Power MOSFET 30V, 150m , 2A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on

Otros transistores... MCH3475 , MCH3477 , MCH3484 , MCH6320 , MCH6321 , MCH6331 , MCH6336 , MCH6337 , IRFP260 , MCH6342 , MCH6344 , MCH6421 , MCH6431 , MCH6436 , MCH6437 , MCH6444 , MCH6445 .