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MCH6341 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MCH6341
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.059 Ohm
   Paquete / Cubierta: MCPH6
     - Selección de transistores por parámetros

 

MCH6341 Datasheet (PDF)

 ..1. Size:64K  sanyo
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MCH6341

Ordering number : ENA1272 MCH6341SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6341ApplicationsFeatures Low ON-resistance. 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --5 A

 8.1. Size:485K  sanyo
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MCH6341

MCH6342Ordering number : ENA1553SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6342ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30

 8.2. Size:342K  sanyo
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MCH6341

MCH6344Ordering number : EN8934SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6344ApplicationsFeatures ON-resistance RDS(on)1=115m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sour

 8.3. Size:673K  onsemi
 mch6344.pdf pdf_icon

MCH6341

MCH6344 Power MOSFET 30V, 150m, 2A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on

MOSTRAR MÁS

Otros transistores... MCH3475 , MCH3477 , MCH3484 , MCH6320 , MCH6321 , MCH6331 , MCH6336 , MCH6337 , IRLB4132 , MCH6342 , MCH6344 , MCH6421 , MCH6431 , MCH6436 , MCH6437 , MCH6444 , MCH6445 .

History: IXTP50N28T | 3SK249

 

 
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