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MCH6341 Datasheet and Replacement


   Type Designator: MCH6341
   Marking Code: YQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: MCPH6
 

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MCH6341 Datasheet (PDF)

 ..1. Size:64K  sanyo
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MCH6341

Ordering number : ENA1272 MCH6341SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6341ApplicationsFeatures Low ON-resistance. 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --5 A

 8.1. Size:485K  sanyo
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MCH6341

MCH6342Ordering number : ENA1553SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6342ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30

 8.2. Size:342K  sanyo
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MCH6341

MCH6344Ordering number : EN8934SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6344ApplicationsFeatures ON-resistance RDS(on)1=115m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sour

 8.3. Size:673K  onsemi
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MCH6341

MCH6344 Power MOSFET 30V, 150m, 2A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on

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