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MCH6341 Specs and Replacement

Type Designator: MCH6341

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm

Package: MCPH6

MCH6341 substitution

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MCH6341 datasheet

 ..1. Size:64K  sanyo
 mch6341.pdf pdf_icon

MCH6341

Ordering number ENA1272 MCH6341 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6341 Applications Features Low ON-resistance. 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --5 A ... See More ⇒

 8.1. Size:485K  sanyo
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MCH6341

MCH6342 Ordering number ENA1553 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6342 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30... See More ⇒

 8.2. Size:342K  sanyo
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MCH6341

MCH6344 Ordering number EN8934 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6344 Applications Features ON-resistance RDS(on)1=115m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sour... See More ⇒

 8.3. Size:673K  onsemi
 mch6344.pdf pdf_icon

MCH6341

MCH6344 Power MOSFET 30V, 150m , 2A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on... See More ⇒

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Detailed specifications: MCH3475 , MCH3477 , MCH3484 , MCH6320 , MCH6321 , MCH6331 , MCH6336 , MCH6337 , IRFP260 , MCH6342 , MCH6344 , MCH6421 , MCH6431 , MCH6436 , MCH6437 , MCH6444 , MCH6445 .

Keywords - MCH6341 MOSFET specs

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