MCH6601 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MCH6601  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 5.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 10.4 Ohm

Encapsulados: MCPH6

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MCH6601 datasheet

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mch6601.pdf pdf_icon

MCH6601

Ordering number EN6458B MCH6601 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6601 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25 C Parame

 8.1. Size:42K  sanyo
mch6605.pdf pdf_icon

MCH6601

Ordering number ENN6460 P-Channel Silicon MOSFET MCH6605 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed swithcing. 2173 4V drive. [MCH6605] Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. 0.3 0.15 6 5 4 1 2 3 0.65 2.0 1 Source1 2 Gate1 3 Drain2 4

 8.2. Size:30K  sanyo
mch6607.pdf pdf_icon

MCH6601

Ordering number ENN7039 MCH6607 P-Channel Silicon MOSFET MCH6607 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2173A 2.5V drive. [MCH6607] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitaing high-density mounting. 4 5 6 3 2 1 0.65 1 Source1

 8.3. Size:42K  sanyo
mch6606.pdf pdf_icon

MCH6601

Ordering number ENN6461 N-Channel Silicon MOSFET MCH6606 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed swithcing. 2173 4V drive. [MCH6606] Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. 0.3 0.15 6 5 4 1 2 3 0.65 2.0 1 Source1 2 Gate1 3 Drain2 4

Otros transistores... MCH6342, MCH6344, MCH6421, MCH6431, MCH6436, MCH6437, MCH6444, MCH6445, IRFB3607, MCH6602, MCH6604, MCH6613, MGSF1N02L, MGSF1N03L, MGSF2N02EL, MLD1N06CL, MMBF0201NL