MCH6601 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MCH6601
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 5.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10.4 Ohm
   Paquete / Cubierta: MCPH6

Búsqueda de reemplazo de MOSFET MCH6601

MCH6601 Datasheet (PDF)

..1. Size:252K sanyo
mch6601.pdf

Ordering number : EN6458B MCH6601SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6601ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame

8.1. Size:42K sanyo
mch6605.pdf

Ordering number:ENN6460P-Channel Silicon MOSFETMCH6605Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2173 4V drive.[MCH6605] Composite type with 2 MOSFETs contained in onepackage, facilitating high-density mounting. 0.3 0.156 5 41 2 30.652.01 : Source12 : Gate13 : Drain24 :

8.2. Size:30K sanyo
mch6607.pdf

Ordering number : ENN7039MCH6607P-Channel Silicon MOSFETMCH6607Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6607] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.651 : Source1

8.3. Size:42K sanyo
mch6606.pdf

Ordering number:ENN6461N-Channel Silicon MOSFETMCH6606Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2173 4V drive.[MCH6606] Composite type with 2 MOSFETs contained in onepackage, facilitating high-density mounting. 0.3 0.156 5 41 2 30.652.01 : Source12 : Gate13 : Drain24 :

8.4. Size:30K sanyo
mch6608.pdf

Ordering number : ENN7040MCH6608N-Channel Silicon MOSFETMCH6608Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6608] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.651 : Source1

8.5. Size:252K sanyo
mch6604.pdf

Ordering number : EN6459A MCH6604SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6604ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame

8.6. Size:30K sanyo
mch6609.pdf

Ordering number : ENN7041MCH6609P-Channel Silicon MOSFETMCH6609Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6609] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitating high-density mounting.4 5 63 2 10.651 : Source

8.7. Size:60K sanyo
mch6602.pdf

Ordering number : EN6445B MCH6602SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6602ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame

8.8. Size:38K sanyo
mch6603.pdf

Ordering number : EN6446B MCH6603SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6603ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame

Otros transistores... MCH6342 , MCH6344 , MCH6421 , MCH6431 , MCH6436 , MCH6437 , MCH6444 , MCH6445 , 4N60 , MCH6602 , MCH6604 , MCH6613 , MGSF1N02L , MGSF1N03L , MGSF2N02EL , MLD1N06CL , MMBF0201NL .

Liste

Recientemente añadidas las descripciónes de los transistores: