MCH6601 - описание и поиск аналогов

Ordering number EN6458B MCH6601 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6601 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25 C Parame

Ordering number ENN6460 P-Channel Silicon MOSFET MCH6605 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed swithcing. 2173 4V drive. [MCH6605] Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. 0.3 0.15 6 5 4 1 2 3 0.65 2.0 1 Source1 2 Gate1 3 Drain2 4

Ordering number ENN7039 MCH6607 P-Channel Silicon MOSFET MCH6607 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2173A 2.5V drive. [MCH6607] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitaing high-density mounting. 4 5 6 3 2 1 0.65 1 Source1

Ordering number ENN6461 N-Channel Silicon MOSFET MCH6606 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed swithcing. 2173 4V drive. [MCH6606] Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. 0.3 0.15 6 5 4 1 2 3 0.65 2.0 1 Source1 2 Gate1 3 Drain2 4

Ordering number ENN7040 MCH6608 N-Channel Silicon MOSFET MCH6608 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2173A 2.5V drive. [MCH6608] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitaing high-density mounting. 4 5 6 3 2 1 0.65 1 Source1

Ordering number EN6459A MCH6604 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6604 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25 C Parame

Ordering number ENN7041 MCH6609 P-Channel Silicon MOSFET MCH6609 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2173A 2.5V drive. [MCH6609] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitating high-density mounting. 4 5 6 3 2 1 0.65 1 Source

Ordering number EN6445B MCH6602 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6602 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25 C Parame

Ordering number EN6446B MCH6603 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6603 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25 C Parame