MCH6602 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCH6602
Código: FB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.4 V
Qgⓘ - Carga de la puerta: 1.58 nC
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 5.9 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
Paquete / Cubierta: MCPH6
Búsqueda de reemplazo de MCH6602 MOSFET
MCH6602 Datasheet (PDF)
mch6602.pdf

Ordering number : EN6445B MCH6602SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6602ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame
mch6605.pdf

Ordering number:ENN6460P-Channel Silicon MOSFETMCH6605Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2173 4V drive.[MCH6605] Composite type with 2 MOSFETs contained in onepackage, facilitating high-density mounting. 0.3 0.156 5 41 2 30.652.01 : Source12 : Gate13 : Drain24 :
mch6601.pdf

Ordering number : EN6458B MCH6601SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6601ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame
mch6607.pdf

Ordering number : ENN7039MCH6607P-Channel Silicon MOSFETMCH6607Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6607] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.651 : Source1
Otros transistores... MCH6344 , MCH6421 , MCH6431 , MCH6436 , MCH6437 , MCH6444 , MCH6445 , MCH6601 , AON7506 , MCH6604 , MCH6613 , MGSF1N02L , MGSF1N03L , MGSF2N02EL , MLD1N06CL , MMBF0201NL , MMBF170L .
History: ATP302 | APT1001R2HN
History: ATP302 | APT1001R2HN



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