MCH6602 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MCH6602
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.35 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 65 ns
Cossⓘ - Выходная емкость: 5.9 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.7 Ohm
Тип корпуса: MCPH6
MCH6602 Datasheet (PDF)
mch6602.pdf
Ordering number : EN6445B MCH6602SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6602ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame
mch6605.pdf
Ordering number:ENN6460P-Channel Silicon MOSFETMCH6605Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2173 4V drive.[MCH6605] Composite type with 2 MOSFETs contained in onepackage, facilitating high-density mounting. 0.3 0.156 5 41 2 30.652.01 : Source12 : Gate13 : Drain24 :
mch6601.pdf
Ordering number : EN6458B MCH6601SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6601ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame
mch6607.pdf
Ordering number : ENN7039MCH6607P-Channel Silicon MOSFETMCH6607Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6607] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.651 : Source1
mch6606.pdf
Ordering number:ENN6461N-Channel Silicon MOSFETMCH6606Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2173 4V drive.[MCH6606] Composite type with 2 MOSFETs contained in onepackage, facilitating high-density mounting. 0.3 0.156 5 41 2 30.652.01 : Source12 : Gate13 : Drain24 :
mch6608.pdf
Ordering number : ENN7040MCH6608N-Channel Silicon MOSFETMCH6608Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6608] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.651 : Source1
mch6604.pdf
Ordering number : EN6459A MCH6604SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6604ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame
mch6609.pdf
Ordering number : ENN7041MCH6609P-Channel Silicon MOSFETMCH6609Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6609] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitating high-density mounting.4 5 63 2 10.651 : Source
mch6603.pdf
Ordering number : EN6446B MCH6603SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6603ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918