MLD1N06CL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MLD1N06CL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 62 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 2.75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Encapsulados: DPAK
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MLD1N06CL datasheet
mld1n06cl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MLD1N06CL/D Designer's Data Sheet MLD1N06CL SMARTDISCRETES Motorola Preferred Device Internally Clamped, Current Limited N Channel Logic Level Power MOSFET VOLTAGE CLAMPED CURRENT LIMITING The MLD1N06CL is designed for applications that require a rugged power switching MOSFET device with short circuit protection
mld1n06cl.pdf
MLD1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N-Channel DPAK The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be http //onsemi.com directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other a
mld1n06c.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MLD1N06CL/D Designer's Data Sheet MLD1N06CL SMARTDISCRETES Motorola Preferred Device Internally Clamped, Current Limited N Channel Logic Level Power MOSFET VOLTAGE CLAMPED CURRENT LIMITING The MLD1N06CL is designed for applications that require a rugged power switching MOSFET device with short circuit protection
Otros transistores... MCH6445 , MCH6601 , MCH6602 , MCH6604 , MCH6613 , MGSF1N02L , MGSF1N03L , MGSF2N02EL , STP80NF70 , MMBF0201NL , MMBF170L , MMBF2201N , MMBF4391L , MMBF4392L , MMBF4393L , MMBFJ175L , MMBFJ177L .
History: MMBF0201NL
History: MMBF0201NL
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