MMBF170L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMBF170L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: SOT23

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MMBF170L Datasheet (PDF)

..1. Size:98K onsemi
mmbf170l nvbf170l.pdf

MMBF170L, NVBF170LPower MOSFET500 mA, 60 V, N-Channel SOT-23Features NVBF Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101http://onsemi.comQualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant500 mA, 60 VRDS(on) = 5 WMAXIMUM RATINGSRating Symbol Value UnitSOT-23Drain-Source Voltage

..2. Size:933K slkor
mmbf170l.pdf

MMBF170LN-Channel Enhancement Mode Field Effect TransistorFeatures Low on resistance RDS(ON) Low gate threshold voltage Low input capacitance ESD protected up to 2KV Marking Code:6Z1.G 2.S 3.DSOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C)Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Drain Cu

0.1. Size:102K motorola
mmbf170lt1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF170LT1/DTMOS FET TransistorDRAIN3MMBF170LT1NChannel1GATE32SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage VDGS 60 VdcGateSource Voltage Continuous VGS 20 Vdc Nonrepeti

0.2. Size:98K motorola
mmbf170lt1rev2d.pdf

0.3. Size:77K onsemi
mmbf170lt1-d.pdf

MMBF170LT1Power MOSFET500 mA, 60 VN-Channel SOT-23Featureshttp://onsemi.com Pb-Free Packages are Available500 mA, 60 VMAXIMUM RATINGSRDS(on) = 5 WRating Symbol Value UnitDrain-Source Voltage VDSS 60 VdcDrain-Gate Voltage VDGS 60 VdcSOT-23CASE 318Gate-Source VoltageSTYLE 21- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Curre

0.4. Size:1611K cn vbsemi
mmbf170lt1g.pdf

MMBF170LT1Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG

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