MMBF170L, NVBF170LPower MOSFET500 mA, 60 V, N-Channel SOT-23Features NVBF Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101http://onsemi.comQualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant500 mA, 60 VRDS(on) = 5 WMAXIMUM RATINGSRating Symbol Value UnitSOT-23Drain-Source Voltage

MMBF170LN-Channel Enhancement Mode Field Effect TransistorFeatures Low on resistance RDS(ON) Low gate threshold voltage Low input capacitance ESD protected up to 2KV Marking Code:6Z1.G 2.S 3.DSOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C)Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Drain Cu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF170LT1/DTMOS FET TransistorDRAIN3MMBF170LT1NChannel1GATE32SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage VDGS 60 VdcGateSource Voltage Continuous VGS 20 Vdc Nonrepeti

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF170LT1/DTMOS FET TransistorDRAIN3MMBF170LT1NChannel1GATE32SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage VDGS 60 VdcGateSource Voltage Continuous VGS 20 Vdc Nonrepeti

MMBF170LT1Power MOSFET500 mA, 60 VN-Channel SOT-23Featureshttp://onsemi.com Pb-Free Packages are Available500 mA, 60 VMAXIMUM RATINGSRDS(on) = 5 WRating Symbol Value UnitDrain-Source Voltage VDSS 60 VdcDrain-Gate Voltage VDGS 60 VdcSOT-23CASE 318Gate-Source VoltageSTYLE 21- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Curre

MMBF170LT1Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG