2SK936 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK936
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de 2SK936 MOSFET
Principales características: 2SK936
2sk932.pdf
Ordering number EN2841 N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions AM tuner RF amplifier, low-noise amplifier. unit mm 2050A Features [2SK932] Adoption of FBET process. 0.4 0.16 Large yfs . 3 Small Ciss. 0 to 0.1 Ultralow noise figure. Ultrasmall-sized package permitting 2SK
2sk937.pdf
Ordering number EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm Large yfs . 2019B Small Ciss. [2SK937] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Source 2 Gate 3 Drain 1 2 3 JEDEC TO-92 EIAJ SC-43 1.3 1.3 SANYO NP Specifications Absolu
2sk932.pdf
Ordering number EN2841B 2SK932 N-Channel JFET http //onsemi.com 15V, 7.3 to 24mA, 50mS, CP Applications AM tuner RF amplifier, low-noise amplifier Features Adoption of FBET process Large yfs Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer Specifications Absolute Maximum Ratings
Otros transistores... 2SK903 , 2SK904 , 2SK905 , 2SK906 , 2SK928 , 2SK929 , 2SK934 , 2SK935 , SI2302 , 2SK946 , 2SK947 , 2SK947-MR , 2SK948 , 2SK949 , 2SK949-MR , 2SK950 , 2SK951 .
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