All MOSFET. 2SK936 Datasheet

 

2SK936 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK936
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO220

 2SK936 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK936 Datasheet (PDF)

 9.1. Size:91K  sanyo
 2sk932.pdf

2SK936 2SK936

Ordering number:EN2841N-Channel Junction Silicon FET2SK932High-FrequencyLow-Noise Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier, low-noise amplifier. unit:mm2050AFeatures [2SK932] Adoption of FBET process.0.40.16 Large yfs .3 Small Ciss.0 to 0.1 Ultralow noise figure. Ultrasmall-sized package permitting 2SK

 9.2. Size:79K  sanyo
 2sk937.pdf

2SK936 2SK936

Ordering number:EN3006N-Channel Junction Silicon FET2SK937High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Large yfs .2019B Small Ciss.[2SK937]5.04.04.00.450.50.440.451 : Source2 : Gate3 : Drain1 2 3JEDEC : TO-92EIAJ : SC-431.3 1.3SANYO : NPSpecificationsAbsolu

 9.3. Size:1048K  onsemi
 2sk932.pdf

2SK936 2SK936

Ordering number : EN2841B2SK932N-Channel JFEThttp://onsemi.com15V, 7.3 to 24mA, 50mS, CPApplications AM tuner RF amplifier, low-noise amplifierFeatures Adoption of FBET process Large yfs | | Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmerSpecificationsAbsolute Maximum Ratings

 9.4. Size:48K  no
 2sk932 2sk937 2sk968 2sk998 2sk1000.pdf

2SK936

 9.5. Size:170K  isahaya
 2sk930.pdf

2SK936 2SK936

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub

 9.6. Size:200K  inchange semiconductor
 2sk935.pdf

2SK936 2SK936

isc N-Channel MOSFET Transistor 2SK935DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 300 VDSS GSV Gate-Source

 9.7. Size:200K  inchange semiconductor
 2sk934.pdf

2SK936 2SK936

isc N-Channel MOSFET Transistor 2SK934DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VDSS GSV Gate-Source

Datasheet: 2SK903 , 2SK904 , 2SK905 , 2SK906 , 2SK928 , 2SK929 , 2SK934 , 2SK935 , 7N60 , 2SK946 , 2SK947 , 2SK947-MR , 2SK948 , 2SK949 , 2SK949-MR , 2SK950 , 2SK951 .

 

 
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