MMBFJ177L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMBFJ177L
   Tipo de FET: JFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.02 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 300 Ohm
Paquete / Cubierta: SOT23

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MMBFJ177L Datasheet (PDF)

0.1. Size:57K motorola
mmbfj177lt1rev0d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ177LT1/DJFET ChopperPChannel Depletion MMBFJ177LT12 SOURCE3GATE1 DRAIN31MAXIMUM RATINGS2Rating Symbol Value UnitDrainGate Voltage VDG 25 VdcCASE 31808, STYLE 10SOT23 (TO236AB)Reverse GateSource Voltage VGS(r) 25 VdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit

0.2. Size:109K onsemi
mmbfj177lt1-d.pdf

MMBFJ177LT1GJFET ChopperP-Channel - DepletionFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliant2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Gate Voltage VDG 25 Vdc1 DRAINReverse Gate-Source Voltage VGS(r) -25 VdcStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings

6.1. Size:728K fairchild semi
j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf

J174 MMBFJ175J175 MMBFJ176J176 MMBFJ177J177GSS TO-92DSOT-23GDMark: 6W / 6X / 6YNOTE: Source & Drain are interchangeableP-Channel SwitchThis device is designed for low level analog switching sample and holdcircuits and chopper stabilized amplifiers. Sourced from Process 88.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units

Otros transistores... MLD1N06CL , MMBF0201NL , MMBF170L , MMBF2201N , MMBF4391L , MMBF4392L , MMBF4393L , MMBFJ175L , STF13NM60N , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , MPF4393 , MTB2P50E .

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