MMBFJ177L MOSFET. Datasheet pdf. Equivalent

MMBFJ177L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MMBFJ177L Datasheet (PDF)

1.1. mmbfj177lt1rev0d.pdf Size:57K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ177LT1/D JFET Chopper P–Channel — Depletion MMBFJ177LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Gate Voltage VDG 25 Vdc CASE 318–08, STYLE 10 SOT–23 (TO–236AB) Reverse Gate–Source Voltage VGS(r) –25 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissi

1.2. mmbfj177lt1-d.pdf Size:109K _onsemi

MMBFJ177LT1G JFET Chopper P-Channel - Depletion Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 1 DRAIN Reverse Gate-Source Voltage VGS(r) -25 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.

 2.1. j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf Size:728K _fairchild_semi

J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG

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