MMSF3P02HD Todos los transistores

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF3P02HD/D Designer's Data Sheet MMSF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V

MMSF3P02HD Preferred Device Power MOSFET 3 Amps, 20 Volts P-Channel SO-8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. 3 AMPERES, 20 VOLTS MiniMOSt devices are desi

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF3P02HD/D Designer's Data Sheet MMSF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V

MMSF3P02HD Power MOSFET 3 Amps, 20 Volts P-Channel SO-8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These 3 AMPERES, 20 VOLTS devices are designed for use in low v

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF3P02Z/D Advance Information MMSF3P02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel with Monolithic Zener ESD SINGLE TMOS Protected Gate POWER MOSFET EZFETs are an advanced series of power MOSFETs which utilize 3.0 AMPERES Motorola s High Cell Density TMOS process and cont