MMSF3P02HD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMSF3P02HD
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 135 nS
Cossⓘ - Capacitancia de salida: 740 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: SO8
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MMSF3P02HD Datasheet (PDF)
mmsf3p02hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
mmsf3p02hd.pdf
MMSF3P02HDPreferred DevicePower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.3 AMPERES, 20 VOLTSMiniMOSt devices are desi
mmsf3p02hdrev5.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
mmsf3p02hdr2.pdf
MMSF3P02HDPower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time. These3 AMPERES, 20 VOLTSdevices are designed for use in low v
mmsf3p02z.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02Z/DAdvance InformationMMSF3P02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize 3.0 AMPERESMotorolas High Cell Density TMOS process and cont
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
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