MMSF3P02HD MOSFET. Datasheet pdf. Equivalent
Type Designator: MMSF3P02HD
SMD Transistor Code: S3P02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 5.6 A
Total Gate Charge (Qg): 33 nC
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: SOIC8
MMSF3P02HD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMSF3P02HD Datasheet (PDF)
1.1. mmsf3p02hdrev5.pdf 
Size:302K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF3P02HD/D Designer's? Data Sheet MMSF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola’s High Cell Density HDTMOS process. 20 VOLTS The
1.2. mmsf3p02hd.pdf Size:259K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF3P02HD/D Designer's? Data Sheet MMSF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS? devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola’s High Cell Density HDTMOS process. 20 VOLTS The
1.3. mmsf3p02hd.pdf Size:97K _onsemi
MMSF3P02HD Preferred Device Power MOSFET 3 Amps, 20 Volts P-Channel SO-8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http://onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. 3 AMPERES, 20 VOLTS MiniMOSt devices are designe
Datasheet: MMBF4393L , MMBFJ175L , MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , 2SK2545 , MPF4393 , MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E .
