MMSF3P02HD
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMSF3P02HD
Marking Code: S3P02
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 5.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 33
nC
trⓘ - Rise Time: 135
nS
Cossⓘ -
Output Capacitance: 740
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075
Ohm
Package:
SO8
MMSF3P02HD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMSF3P02HD
Datasheet (PDF)
..1. Size:259K motorola
mmsf3p02hd.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
..2. Size:97K onsemi
mmsf3p02hd.pdf
MMSF3P02HDPreferred DevicePower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.3 AMPERES, 20 VOLTSMiniMOSt devices are desi
0.1. Size:302K motorola
mmsf3p02hdrev5.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
0.2. Size:129K onsemi
mmsf3p02hdr2.pdf
MMSF3P02HDPower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time. These3 AMPERES, 20 VOLTSdevices are designed for use in low v
6.1. Size:285K motorola
mmsf3p02z.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02Z/DAdvance InformationMMSF3P02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize 3.0 AMPERESMotorolas High Cell Density TMOS process and cont
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