MMSF3P02HD Datasheet. Specs and Replacement

Type Designator: MMSF3P02HD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 135 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SO8

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MMSF3P02HD substitution

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MMSF3P02HD datasheet

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MMSF3P02HD

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF3P02HD/D Designer's Data Sheet MMSF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V... See More ⇒

 ..2. Size:97K  onsemi
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MMSF3P02HD

MMSF3P02HD Preferred Device Power MOSFET 3 Amps, 20 Volts P-Channel SO-8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. 3 AMPERES, 20 VOLTS MiniMOSt devices are desi... See More ⇒

 0.1. Size:302K  motorola
 mmsf3p02hdrev5.pdf pdf_icon

MMSF3P02HD

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF3P02HD/D Designer's Data Sheet MMSF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V... See More ⇒

 0.2. Size:129K  onsemi
 mmsf3p02hdr2.pdf pdf_icon

MMSF3P02HD

MMSF3P02HD Power MOSFET 3 Amps, 20 Volts P-Channel SO-8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These 3 AMPERES, 20 VOLTS devices are designed for use in low v... See More ⇒

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Detailed specifications: MMBF4393L, MMBFJ175L, MMBFJ177L, MMBFJ309L, MMBFJ310L, MMBFU310L, MMDF1N05E, MMFT960, STP65NF06, MPF4393, MTB2P50E, MTB50P03HDL, MTD5P06V, MTD6N15, MTD6N20E, MTP20N15E, MTP2P50E

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