MPF4393 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPF4393
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.35 W
Tensión drenaje-fuente (Vds): 30 V
Corriente continua de drenaje (Id): 0.03 A
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 100 Ohm
Empaquetado / Estuche: TO92
Búsqueda de reemplazo de MOSFET MPF4393
MPF4393 Datasheet (PDF)
1.1. mpf4392 mpf4393.pdf 
Size:119K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPF4392/D JFETs Switching 1 DRAIN NChannel Depletion MPF4392 MPF4393 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage VDS 30 Vdc 1 DrainGate Voltage VDG 30 Vdc 2 3 GateSource Voltage VGS 30 Vdc CASE 2904, STYLE 5 Forward Gate Current IG(f) 50 mAdc TO92 (
1.2. cmpf4391 cmpf4392 cmpf4393.pdf Size:328K _central
CMPF4391 CMPF4392 CMPF4393 www.centralsemi.com SURFACE MOUNT DESCRIPTION: N-CHANNEL The CENTRAL SEMICONDUCTOR CMPF4391 series SILICON JFET types are N-Channel Silicon Field Effect Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for switching applications. MARKING CODE: CMPF4391: 6J CMPF4392: 6K CMPF4393: 6G SOT-23 C
1.3. mpf4392 mpf4393.pdf Size:75K _onsemi
MPF4392, MPF4393 Preferred Devices JFET Switching Transistors N-Channel - Depletion Features Pb-Free Packages are Available* http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Source Voltage VDS 30 Vdc GATE Drain-Gate Voltag VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc 1 DRAIN Forward Gate Current IG(f) 50 mAdc Total Device Dissipation PD @ TA = 25C 350 mW
Otros transistores... MMBFJ175L , MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , IRF9640 , MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL .
