MPF4393 MOSFET. Datasheet pdf. Equivalent
Type Designator: MPF4393
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.35 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Drain Current |Id|: 0.03 A
Maximum Drain-Source On-State Resistance (Rds): 100 Ohm
Package: TO92
MPF4393 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MPF4393 Datasheet (PDF)
1.1. mpf4392 mpf4393.pdf 
Size:119K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPF4392/D JFETs Switching 1 DRAIN N–Channel — Depletion MPF4392 MPF4393 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc 1 Drain–Gate Voltage VDG 30 Vdc 2 3 Gate–Source Voltage VGS 30 Vdc CASE 29–04, STYLE 5 Forward Gate Current IG(f) 50 mAdc TO–92 (
1.2. cmpf4391 cmpf4392 cmpf4393.pdf Size:328K _central
CMPF4391 CMPF4392 CMPF4393 www.centralsemi.com SURFACE MOUNT DESCRIPTION: N-CHANNEL The CENTRAL SEMICONDUCTOR CMPF4391 series SILICON JFET types are N-Channel Silicon Field Effect Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for switching applications. MARKING CODE: CMPF4391: 6J CMPF4392: 6K CMPF4393: 6G SOT-23 C
1.3. mpf4392 mpf4393.pdf Size:75K _onsemi
MPF4392, MPF4393 Preferred Devices JFET Switching Transistors N-Channel - Depletion Features • Pb-Free Packages are Available* http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Source Voltage VDS 30 Vdc GATE Drain-Gate Voltag VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc 1 DRAIN Forward Gate Current IG(f) 50 mAdc Total Device Dissipation PD @ TA = 25°C 350 mW
Datasheet: MMBFJ175L , MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , IRF9640 , MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL .
