MTD6N20E Todos los transistores

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MTD6N20E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTD6N20E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.46 Ohm

Empaquetado / Estuche: DPAK4

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MTD6N20E Datasheet (PDF)

1.1. mtd6n20e.pdf Size:269K _motorola

MTD6N20E
MTD6N20E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N20E/D Designer's? Data Sheet MTD6N20E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 6.0 AMPERES 200 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.7 OHM energy in the avalanche and commutation

1.2. mtd6n20e-d.pdf Size:129K _onsemi

MTD6N20E
MTD6N20E

MTD6N20E Power MOSFET 6 A, 200 V, N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching http://onsemi.com applications in power supplies, converters and PWM motor controls, these devic

5.1. mtd6n15r.pdf Size:231K _motorola

MTD6N20E
MTD6N20E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N15/D Designer's? Data Sheet MTD6N15 Power Field Effect Transistor DPAK for Surface Mount NChannel EnhancementMode Silicon Gate TMOS POWER FET This TMOS Power FET is designed for high speed, low loss 6.0 AMPERES power switching applications such as switching regulators, convert- 150 VOLTS ers, solenoid and relay drive

5.2. mtd6n10e.pdf Size:211K _motorola

MTD6N20E
MTD6N20E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N10E/D Designer's? Data Sheet MTD6N10E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 6.0 AMPERES 100 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 0.400 OHM energy in the avalanche and commutat

5.3. mtd6n15-d.pdf Size:70K _onsemi

MTD6N20E
MTD6N20E

MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, http://onsemi.com solenoid and relay drivers. V(BR)DSS RDS(on) MAX ID MAX Features 150 V 0.3 W 6.0 A Silicon Gate for Fast Switching Speeds Low RDS(on) 0

Otros transistores... MMDF1N05E , MMFT960 , MMSF3P02HD , MPF4393 , MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , SPA11N60C3 , MTP20N15E , MTP2P50E , MTP50P03HDL , MTW32N20E , NCV8401 , NCV8402 , NCV8402D , NCV8403 .

 


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