MTD6N20E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6N20E/DDesigner's Data SheetMTD6N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.7 OHMenergy in the avalanche an

MTD6N20EPower MOSFET6 A, 200 V, N-Channel DPAKThis advanced Power MOSFET is designed to withstand highenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fastrecovery time. Designed for low voltage, high speed switchinghttp://onsemi.comapplications in power supplies, converters and PWM motor controls,these de

MTD6N20EPower MOSFET6 A, 200 V, N-Channel DPAKThis advanced Power MOSFET is designed to withstand highenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fastrecovery time. Designed for low voltage, high speed switchinghttp://onsemi.comapplications in power supplies, converters and PWM motor controls,these de

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6N15/DDesigner's Data SheetMTD6N15Power Field Effect TransistorDPAK for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETThis TMOS Power FET is designed for high speed, low loss6.0 AMPERESpower switching applications such as switching regulators, convert-150 VOLTSers, solenoid and re

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6N10E/DDesigner's Data SheetMTD6N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES 100 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.400 OHMenergy in the avalanche

MTD6N15Power Field Effect TransistorDPAK for Surface MountN-Channel Enhancement-Mode Silicon GateThis TMOS Power FET is designed for high speed, low loss powerswitching applications such as switching regulators, converters,http://onsemi.comsolenoid and relay drivers.V(BR)DSS RDS(on) MAX ID MAXFeatures150 V 0.3 W 6.0 A Silicon Gate for Fast Switching Speeds Low RDS(

MTD6N15T4Gwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATIN