All MOSFET. MTD6N20E Datasheet

 

MTD6N20E MOSFET. Datasheet pdf. Equivalent

Type Designator: MTD6N20E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6 A

Total Gate Charge (Qg): 13.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.46 Ohm

Package: DPAK4

MTD6N20E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTD6N20E Datasheet (PDF)

0.1. mtd6n20e.pdf Size:269K _motorola

MTD6N20E
MTD6N20E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N20E/D Designer's Data Sheet MTD6N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface

0.2. mtd6n20et4 mtd6n20et4g.pdf Size:124K _onsemi

MTD6N20E
MTD6N20E

MTD6N20E Power MOSFET 6 A, 200 V, N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching http://onsemi.com applications in power supplies, converters and PWM motor controls, these de

 0.3. mtd6n20e-d.pdf Size:129K _onsemi

MTD6N20E
MTD6N20E

MTD6N20E Power MOSFET 6 A, 200 V, N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching http://onsemi.com applications in power supplies, converters and PWM motor controls, these de

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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