NCV8406 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCV8406  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 14 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 486 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm

Encapsulados: SOT223 DPAK

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NCV8406 datasheet

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NCV8406

NCV8406 Self-Protected Low Side Driver with Temperature and Current Limit 65 V, 7.0 A, Single N-Channel http //onsemi.com NCV8406 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, VDSS ID TYP ESD and integrated Drain-to-Gate clamping for overvoltage protection. (Clamped) RDS(on) TYP (Limited) This device offers

 0.1. Size:137K  onsemi
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NCV8406

NCV8406, NCV8406A Self-Protected Low Side Driver with Temperature and Current Limit 65 V, 7.0 A, Single N-Channel http //onsemi.com NCV8406/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, VDSS ID TYP ESD and integrated Drain-to-Gate clamping for overvoltage protection. (Clamped) RDS(on) TYP (Limited) This d

 8.1. Size:122K  onsemi
ncv8401.pdf pdf_icon

NCV8406

NCV8401 Self-Protected Low Side Driver with Temperature and Current Limit NCV8401 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive VDSS ID MAX (Clamped) RDS(

 8.2. Size:152K  onsemi
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NCV8406

NCV8402 Self-Protected Low Side Driver with Temperature and Current Limit NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS RDS(ON) TYP ID MAX (Clampe

Otros transistores... MTP2P50E, MTP50P03HDL, MTW32N20E, NCV8401, NCV8402, NCV8402D, NCV8403, NCV8405, AO4468, NCV8440, NCV8450, NDD02N60Z, NDD03N50Z, NDD03N60Z, NDD04N50Z, NDD04N60Z, FDME910PZT