NCV8406 Todos los transistores

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NCV8406 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCV8406

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.31 W

Tensión drenaje-fuente (Vds): 65 V

Tensión compuerta-fuente (Vgs): 14 V

Corriente continua de drenaje (Id): 7 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.21 Ohm

Empaquetado / Estuche: DPAK_SOT223_TO261

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NCV8406 Datasheet (PDF)

1.1. ncv8406.pdf Size:140K _onsemi

NCV8406
NCV8406

NCV8406 Self-Protected Low Side Driver with Temperature and Current Limit 65 V, 7.0 A, Single N-Channel http://onsemi.com NCV8406 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, VDSS ID TYP ESD and integrated Drain-to-Gate clamping for overvoltage protection. (Clamped) RDS(on) TYP (Limited) This device offers pr

4.1. ncv8402.pdf Size:152K _onsemi

NCV8406
NCV8406

NCV8402 Self-Protected Low Side Driver with Temperature and Current Limit NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http://onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS RDS(ON) TYP ID MAX (Clamped)

4.2. ncv8402d.pdf Size:147K _onsemi

NCV8406
NCV8406

NCV8402D Dual Self-Protected Low-Side Driver with Temperature and Current Limit http://onsemi.com NCV8402D is a dual protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V(BR)DSS integrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYP ID MAX (Clamped) device offers protection and is suitable for harsh aut

4.3. ncv8401.pdf Size:122K _onsemi

NCV8406
NCV8406

NCV8401 Self-Protected Low Side Driver with Temperature and Current Limit NCV8401 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http://onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive VDSS ID MAX (Clamped) RDS(ON)

4.4. ncv8403.pdf Size:163K _onsemi

NCV8406
NCV8406

NCV8403 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N-Channel, SOT-223 http://onsemi.com NCV8403 is a three terminal protected Low-Side Smart Discrete VDSS ID MAX device. The protection features include overcurrent, overtemperature, RDS(on) TYP (Clamped) (Limited) ESD and integrated Drain-to-Gate clamping for overvoltage protection. This devi

4.5. ncv8405.pdf Size:136K _onsemi

NCV8406
NCV8406

NCV8405 Self-Protected Low Side Driver with Temperature and Current Limit NCV8405 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http://onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device is suitable for harsh automotive environments. V(BR)DSS RDS(ON) TYP ID MAX (Clampe

Otros transistores... MTP2P50E , MTP50P03HDL , MTW32N20E , NCV8401 , NCV8402 , NCV8402D , NCV8403 , NCV8405 , IRFP260M , NCV8440 , NCV8450 , NDD02N60Z , NDD03N50Z , NDD03N60Z , NDD04N50Z , NDD04N60Z , FDME910PZT .

 


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Introduzca al menos 1 números o letras