All MOSFET. NCV8406 Datasheet

 

NCV8406 Datasheet and Replacement


   Type Designator: NCV8406
   Marking Code: 8406_V8406G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 486 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: SOT223 DPAK
 

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NCV8406 Datasheet (PDF)

 ..1. Size:140K  onsemi
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NCV8406

NCV8406Self-Protected Low SideDriver with Temperatureand Current Limit65 V, 7.0 A, Single N-Channelhttp://onsemi.comNCV8406 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,VDSS ID TYPESD and integrated Drain-to-Gate clamping for overvoltage protection.(Clamped) RDS(on) TYP (Limited)This device offers

 0.1. Size:137K  onsemi
ncv8406a.pdf pdf_icon

NCV8406

NCV8406, NCV8406ASelf-Protected Low SideDriver with Temperatureand Current Limit65 V, 7.0 A, Single N-Channelhttp://onsemi.comNCV8406/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,VDSS ID TYPESD and integrated Drain-to-Gate clamping for overvoltage protection.(Clamped) RDS(on) TYP (Limited)This d

 8.1. Size:122K  onsemi
ncv8401.pdf pdf_icon

NCV8406

NCV8401Self-Protected Low SideDriver with Temperatureand Current LimitNCV8401 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(Clamped) RDS(

 8.2. Size:152K  onsemi
ncv8402.pdf pdf_icon

NCV8406

NCV8402Self-Protected Low SideDriver with Temperatureand Current LimitNCV8402 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSRDS(ON) TYPID MAX(Clampe

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FQU12N20

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