NCV8450 Todos los transistores

 ..1. Size:147K  onsemi
 ncv8450.pdf

NCV8450 Self-Protected High Side Driver with Temperature and Current Limit The NCV8450 is a fully protected High-Side Smart Discrete device with a typical RDS(on) of 1.0 W and an internal current limit of 0.8 A http //onsemi.com typical. The device can switch a wide variety of resistive, inductive, and capacitive loads. MARKING DIAGRAM Features Short Circuit Protection AYW

 0.1. Size:116K  onsemi
 ncv8450a.pdf

NCV8450, NCV8450A Self-Protected High Side Driver with Temperature and Current Limit The NCV8450/A is a fully protected High-Side Smart Discrete device with a typical RDS(on) of 1.0 W and an internal current limit of http //onsemi.com 0.8 A typical. The device can switch a wide variety of resistive, inductive, and capacitive loads. MARKING DIAGRAM Features Short Circuit Protectio

 9.1. Size:122K  onsemi
 ncv8401.pdf

NCV8401 Self-Protected Low Side Driver with Temperature and Current Limit NCV8401 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive VDSS ID MAX (Clamped) RDS(

 9.2. Size:152K  onsemi
 ncv8402.pdf

NCV8402 Self-Protected Low Side Driver with Temperature and Current Limit NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS RDS(ON) TYP ID MAX (Clampe

 9.3. Size:128K  onsemi
 ncv8440-a.pdf

NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features http //onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 V VDSS RDS(ON) TYP ID MAX (Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) 52 V 95 mW @ 10 V 2.6 A Internal Serie

 9.4. Size:92K  onsemi
 ncv8402a ncv8402astt1g.pdf

NCV8402, NCV8402A Self-Protected Low Side Driver with Temperature and Current Limit NCV8402/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, www.onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS automotive environm

 9.5. Size:140K  onsemi
 ncv8406.pdf

NCV8406 Self-Protected Low Side Driver with Temperature and Current Limit 65 V, 7.0 A, Single N-Channel http //onsemi.com NCV8406 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, VDSS ID TYP ESD and integrated Drain-to-Gate clamping for overvoltage protection. (Clamped) RDS(on) TYP (Limited) This device offers

 9.6. Size:98K  onsemi
 ncv8408.pdf

NCV8408 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N-Channel, DPAK http //onsemi.com NCV8408 is a single channel protected Low-Side Smart Discrete VDSS ID MAX device. The protection features include overcurrent, overtemperature, RDS(on) TYP (Clamped) (Limited) ESD and integrated Drain-to-Gate clamping for overvoltage protection. Thermal prot

 9.7. Size:135K  onsemi
 ncv8403a.pdf

NCV8403, NCV8403A Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N-Channel, SOT-223 http //onsemi.com NCV8403/A is a three terminal protected Low-Side Smart Discrete VDSS ID MAX device. The protection features include overcurrent, overtemperature, RDS(on) TYP (Clamped) (Limited) ESD and integrated Drain-to-Gate clamping for overvoltage protection

 9.8. Size:137K  onsemi
 ncv8406a.pdf

NCV8406, NCV8406A Self-Protected Low Side Driver with Temperature and Current Limit 65 V, 7.0 A, Single N-Channel http //onsemi.com NCV8406/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, VDSS ID TYP ESD and integrated Drain-to-Gate clamping for overvoltage protection. (Clamped) RDS(on) TYP (Limited) This d

 9.9. Size:123K  onsemi
 ncv8401a ncv8401adtrkg ncv8401dtrkg.pdf

NCV8401, NCV8401A Self-Protected Low Side Driver with Temperature and Current Limit NCV8401/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive VDSS ID MAX (C

 9.10. Size:163K  onsemi
 ncv8403.pdf

NCV8403 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N-Channel, SOT-223 http //onsemi.com NCV8403 is a three terminal protected Low-Side Smart Discrete VDSS ID MAX device. The protection features include overcurrent, overtemperature, RDS(on) TYP (Clamped) (Limited) ESD and integrated Drain-to-Gate clamping for overvoltage protection. This devi

 9.11. Size:118K  onsemi
 ncv8402ad.pdf

NCV8402D, NCV8402AD Dual Self-Protected Low-Side Driver with Temperature and Current Limit http //onsemi.com NCV8402D/AD is a dual protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V(BR)DSS integrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYP ID MAX (Clamped) device offers protection and is suita

 9.12. Size:84K  onsemi
 ncv8440 ncv8440a.pdf

NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features www.onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 V VDSS RDS(ON) TYP ID MAX (Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) 52 V 95 mW @ 10 V 2.6 A Internal Series Ga

 9.13. Size:147K  onsemi
 ncv8402d.pdf

NCV8402D Dual Self-Protected Low-Side Driver with Temperature and Current Limit http //onsemi.com NCV8402D is a dual protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V(BR)DSS integrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYP ID MAX (Clamped) device offers protection and is suitable for harsh

 9.14. Size:136K  onsemi
 ncv8405a.pdf

NCV8405, NCV8405A Self-Protected Low Side Driver with Temperature and Current Limit NCV8405/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device is suitable for harsh automotive environments. V(BR)DSS RDS(ON) TYP

 9.15. Size:136K  onsemi
 ncv8405.pdf

NCV8405 Self-Protected Low Side Driver with Temperature and Current Limit NCV8405 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device is suitable for harsh automotive environments. V(BR)DSS RDS(ON) TYP ID MAX (Cla

 9.16. Size:116K  onsemi
 ncv8440a.pdf

NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features http //onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 V VDSS RDS(ON) TYP ID MAX (Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) 52 V 95 mW @ 10 V 2.6 A Internal Serie

 9.17. Size:111K  onsemi
 ncv8403a ncv8403b.pdf

NCV8403A, NCV8403B Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N-Channel, SOT-223 www.onsemi.com NCV8403A/B is a three terminal protected Low-Side Smart Discrete VDSS ID MAX device. The protection features include overcurrent, overtemperature, RDS(on) TYP (Clamped) (Limited) ESD and integrated Drain-to-Gate clamping for overvoltage protection.