NCV8450 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCV8450
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
|Id|ⓘ - Corriente continua de drenaje: 0.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET NCV8450
NCV8450 Datasheet (PDF)
ncv8450.pdf
NCV8450Self-Protected High SideDriver with Temperatureand Current LimitThe NCV8450 is a fully protected High-Side Smart Discrete devicewith a typical RDS(on) of 1.0 W and an internal current limit of 0.8 Ahttp://onsemi.comtypical. The device can switch a wide variety of resistive, inductive,and capacitive loads. MARKINGDIAGRAMFeatures Short Circuit ProtectionAYW
ncv8450a.pdf
NCV8450, NCV8450ASelf-Protected High SideDriver with Temperatureand Current LimitThe NCV8450/A is a fully protected High-Side Smart Discretedevice with a typical RDS(on) of 1.0 W and an internal current limit ofhttp://onsemi.com0.8 A typical. The device can switch a wide variety of resistive,inductive, and capacitive loads. MARKINGDIAGRAMFeatures Short Circuit Protectio
ncv8401.pdf
NCV8401Self-Protected Low SideDriver with Temperatureand Current LimitNCV8401 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(Clamped) RDS(
ncv8402.pdf
NCV8402Self-Protected Low SideDriver with Temperatureand Current LimitNCV8402 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSRDS(ON) TYPID MAX(Clampe
ncv8440-a.pdf
NCV8440, NCV8440AProtected Power MOSFET2.6 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ ESD ProtectionFeatureshttp://onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 VVDSSRDS(ON) TYP ID MAX(Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on)52 V 95 mW @ 10 V 2.6 A Internal Serie
ncv8402a ncv8402astt1g.pdf
NCV8402, NCV8402ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8402/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,www.onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSautomotive environm
ncv8406.pdf
NCV8406Self-Protected Low SideDriver with Temperatureand Current Limit65 V, 7.0 A, Single N-Channelhttp://onsemi.comNCV8406 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,VDSS ID TYPESD and integrated Drain-to-Gate clamping for overvoltage protection.(Clamped) RDS(on) TYP (Limited)This device offers
ncv8408.pdf
NCV8408Self-Protected Low SideDriver with Temperatureand Current Limit42 V, 10 A, Single N-Channel, DPAKhttp://onsemi.comNCV8408 is a single channel protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection.Thermal prot
ncv8403a.pdf
NCV8403, NCV8403ASelf-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223http://onsemi.comNCV8403/A is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection
ncv8406a.pdf
NCV8406, NCV8406ASelf-Protected Low SideDriver with Temperatureand Current Limit65 V, 7.0 A, Single N-Channelhttp://onsemi.comNCV8406/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,VDSS ID TYPESD and integrated Drain-to-Gate clamping for overvoltage protection.(Clamped) RDS(on) TYP (Limited)This d
ncv8401a ncv8401adtrkg ncv8401dtrkg.pdf
NCV8401, NCV8401ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8401/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(C
ncv8403.pdf
NCV8403Self-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223http://onsemi.comNCV8403 is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection.This devi
ncv8402ad.pdf
NCV8402D, NCV8402ADDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D/AD is a dual protected Low-Side Smart Discrete device.The protection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suita
ncv8440 ncv8440a.pdf
NCV8440, NCV8440AProtected Power MOSFET2.6 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ ESD ProtectionFeatureswww.onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 VVDSS RDS(ON) TYP ID MAX(Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on)52 V 95 mW @ 10 V 2.6 A Internal Series Ga
ncv8402d.pdf
NCV8402DDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D is a dual protected Low-Side Smart Discrete device. Theprotection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suitable for harsh
ncv8405a.pdf
NCV8405, NCV8405ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8405/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device is suitable for harsh automotive environments.V(BR)DSSRDS(ON) TYP
ncv8405.pdf
NCV8405Self-Protected Low SideDriver with Temperatureand Current LimitNCV8405 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device is suitable for harsh automotive environments.V(BR)DSSRDS(ON) TYPID MAX(Cla
ncv8440a.pdf
NCV8440, NCV8440AProtected Power MOSFET2.6 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ ESD ProtectionFeatureshttp://onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 VVDSSRDS(ON) TYP ID MAX(Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on)52 V 95 mW @ 10 V 2.6 A Internal Serie
ncv8403a ncv8403b.pdf
NCV8403A, NCV8403BSelf-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223www.onsemi.comNCV8403A/B is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection.
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