NCV8450 Todos los transistores

 

NCV8450 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCV8450
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Id|ⓘ - Corriente continua de drenaje: 0.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: SOT223
 

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NCV8450 datasheet

 ..1. Size:147K  onsemi
ncv8450.pdf pdf_icon

NCV8450

NCV8450 Self-Protected High Side Driver with Temperature and Current Limit The NCV8450 is a fully protected High-Side Smart Discrete device with a typical RDS(on) of 1.0 W and an internal current limit of 0.8 A http //onsemi.com typical. The device can switch a wide variety of resistive, inductive, and capacitive loads. MARKING DIAGRAM Features Short Circuit Protection AYW

 0.1. Size:116K  onsemi
ncv8450a.pdf pdf_icon

NCV8450

NCV8450, NCV8450A Self-Protected High Side Driver with Temperature and Current Limit The NCV8450/A is a fully protected High-Side Smart Discrete device with a typical RDS(on) of 1.0 W and an internal current limit of http //onsemi.com 0.8 A typical. The device can switch a wide variety of resistive, inductive, and capacitive loads. MARKING DIAGRAM Features Short Circuit Protectio

 9.1. Size:122K  onsemi
ncv8401.pdf pdf_icon

NCV8450

NCV8401 Self-Protected Low Side Driver with Temperature and Current Limit NCV8401 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive VDSS ID MAX (Clamped) RDS(

 9.2. Size:152K  onsemi
ncv8402.pdf pdf_icon

NCV8450

NCV8402 Self-Protected Low Side Driver with Temperature and Current Limit NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS RDS(ON) TYP ID MAX (Clampe

Otros transistores... MTW32N20E , NCV8401 , NCV8402 , NCV8402D , NCV8403 , NCV8405 , NCV8406 , NCV8440 , IRLB3034 , NDD02N60Z , NDD03N50Z , NDD03N60Z , NDD04N50Z , NDD04N60Z , FDME910PZT , NDD05N50Z , NDF02N60Z .

 

 
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