NCV8450 MOSFET. Datasheet pdf. Equivalent

NCV8450Self-Protected High SideDriver with Temperatureand Current LimitThe NCV8450 is a fully protected High-Side Smart Discrete devicewith a typical RDS(on) of 1.0 W and an internal current limit of 0.8 Ahttp://onsemi.comtypical. The device can switch a wide variety of resistive, inductive,and capacitive loads. MARKINGDIAGRAMFeatures Short Circuit ProtectionAYW

NCV8450, NCV8450ASelf-Protected High SideDriver with Temperatureand Current LimitThe NCV8450/A is a fully protected High-Side Smart Discretedevice with a typical RDS(on) of 1.0 W and an internal current limit ofhttp://onsemi.com0.8 A typical. The device can switch a wide variety of resistive,inductive, and capacitive loads. MARKINGDIAGRAMFeatures Short Circuit Protectio

NCV8401Self-Protected Low SideDriver with Temperatureand Current LimitNCV8401 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(Clamped) RDS(

NCV8402Self-Protected Low SideDriver with Temperatureand Current LimitNCV8402 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSRDS(ON) TYPID MAX(Clampe

NCV8440, NCV8440AProtected Power MOSFET2.6 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ ESD ProtectionFeatureshttp://onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 VVDSSRDS(ON) TYP ID MAX(Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on)52 V 95 mW @ 10 V 2.6 A Internal Serie

NCV8402, NCV8402ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8402/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,www.onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSautomotive environm

NCV8406Self-Protected Low SideDriver with Temperatureand Current Limit65 V, 7.0 A, Single N-Channelhttp://onsemi.comNCV8406 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,VDSS ID TYPESD and integrated Drain-to-Gate clamping for overvoltage protection.(Clamped) RDS(on) TYP (Limited)This device offers

NCV8408Self-Protected Low SideDriver with Temperatureand Current Limit42 V, 10 A, Single N-Channel, DPAKhttp://onsemi.comNCV8408 is a single channel protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection.Thermal prot

NCV8403, NCV8403ASelf-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223http://onsemi.comNCV8403/A is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection

NCV8406, NCV8406ASelf-Protected Low SideDriver with Temperatureand Current Limit65 V, 7.0 A, Single N-Channelhttp://onsemi.comNCV8406/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,VDSS ID TYPESD and integrated Drain-to-Gate clamping for overvoltage protection.(Clamped) RDS(on) TYP (Limited)This d

NCV8401, NCV8401ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8401/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(C

NCV8403Self-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223http://onsemi.comNCV8403 is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection.This devi

NCV8402D, NCV8402ADDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D/AD is a dual protected Low-Side Smart Discrete device.The protection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suita

NCV8440, NCV8440AProtected Power MOSFET2.6 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ ESD ProtectionFeatureswww.onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 VVDSS RDS(ON) TYP ID MAX(Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on)52 V 95 mW @ 10 V 2.6 A Internal Series Ga

NCV8402DDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D is a dual protected Low-Side Smart Discrete device. Theprotection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suitable for harsh

NCV8405, NCV8405ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8405/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device is suitable for harsh automotive environments.V(BR)DSSRDS(ON) TYP

NCV8405Self-Protected Low SideDriver with Temperatureand Current LimitNCV8405 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device is suitable for harsh automotive environments.V(BR)DSSRDS(ON) TYPID MAX(Cla

NCV8440, NCV8440AProtected Power MOSFET2.6 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ ESD ProtectionFeatureshttp://onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 VVDSSRDS(ON) TYP ID MAX(Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on)52 V 95 mW @ 10 V 2.6 A Internal Serie

NCV8403A, NCV8403BSelf-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223www.onsemi.comNCV8403A/B is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection.