FDMC8327L Todos los transistores

 

FDMC8327L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC8327L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 14 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 18.5 nC

Resistencia drenaje-fuente RDS(on): 0.0097 Ohm

Empaquetado / Estuche: MLP3.3X3.3

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FDMC8327L Datasheet (PDF)

1.1. fdmc8327l.pdf Size:290K _fairchild_semi

FDMC8327L
FDMC8327L

October 2013 FDMC8327L N-Channel PowerTrench® MOSFET 40 V, 14 A, 9.7 mΩ Features General Description Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Low Pro

3.1. fdmc8321ldc.pdf Size:561K _fairchild_semi

FDMC8327L
FDMC8327L

December 2014 FDMC8321LDC N-Channel Power Trench® MOSFET 40 V, 108 A, 2.5 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 mΩ at VGS = 4.

3.2. fdmc8321l.pdf Size:263K _fairchild_semi

FDMC8327L
FDMC8327L

February 2013 FDMC8321L N-Channel Power Trench® MOSFET 40 V, 49 A, 2.5 mΩ Features General Description Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A ringing of DC/DC converters using either synchronous or Advanced

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