FDMC8327L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMC8327L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.2 nS
Cossⓘ - Capacitancia de salida: 347 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0097 Ohm
Paquete / Cubierta: POWER33
Búsqueda de reemplazo de MOSFET FDMC8327L
Principales características: FDMC8327L
fdmc8327l.pdf
October 2013 FDMC8327L N-Channel PowerTrench MOSFET 40 V, 14 A, 9.7 m Features General Description Max rDS(on) = 9.7 m at VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Low Pro
fdmc8321l.pdf
February 2013 FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 18 A ringing of DC/DC converters using either synchronous or Advanced
fdmc8321ldc.pdf
December 2014 FDMC8321LDC N-Channel Power Trench MOSFET 40 V, 108 A, 2.5 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.5 m at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 m at VGS = 4.
fdmc8360l.pdf
June 2013 FDMC8360L N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 2.1 m at VGS = 10 V, ID = 27 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 3.1 m
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