FDMC8327L Todos los transistores

 

FDMC8327L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMC8327L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 30 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 14 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 18.5 nC
   Tiempo de subida (tr): 2.2 nS
   Conductancia de drenaje-sustrato (Cd): 347 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0097 Ohm
   Paquete / Cubierta: POWER33

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FDMC8327L Datasheet (PDF)

 ..1. Size:290K  fairchild semi
fdmc8327l.pdf

FDMC8327L
FDMC8327L

October 2013FDMC8327LN-Channel PowerTrench MOSFET 40 V, 14 A, 9.7 m Features General Description Max rDS(on) = 9.7 m at VGS = 10 V, ID = 12 AThis N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process that has Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance and Low Pro

 7.1. Size:263K  fairchild semi
fdmc8321l.pdf

FDMC8327L
FDMC8327L

February 2013FDMC8321LN-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 22 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 18 Aringing of DC/DC converters using either synchronous or Advanced

 7.2. Size:561K  fairchild semi
fdmc8321ldc.pdf

FDMC8327L
FDMC8327L

December 2014FDMC8321LDCN-Channel Power Trench MOSFET40 V, 108 A, 2.5 mFeatures General Description Dual CoolTM Top Side Cooling PQFN packageThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.5 m at VGS = 10 V, ID = 27 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 m at VGS = 4.

 8.1. Size:367K  fairchild semi
fdmc8360l.pdf

FDMC8327L
FDMC8327L

June 2013FDMC8360LN-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 2.1 m at VGS = 10 V, ID = 27 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 3.1 m

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