FDMC8327L MOSFET PDF: N-Ch, 40V, 14A. Datasheet. Full specification with pinout and replacement list

FDMC8327L Specs and Replacement

   Type Designator: FDMC8327L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 347 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
   Package: POWER33

FDMC8327L substitution

- MOSFET ⓘ Cross-Reference Search

FDMC8327L datasheet

..1. Size:290K fairchild semi
fdmc8327l.pdf pdf_icon

October 2013 FDMC8327L N-Channel PowerTrench MOSFET 40 V, 14 A, 9.7 m Features General Description Max rDS(on) = 9.7 m at VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Low Pro... See More ⇒

7.1. Size:263K fairchild semi
fdmc8321l.pdf pdf_icon

February 2013 FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 18 A ringing of DC/DC converters using either synchronous or Advanced ... See More ⇒

7.2. Size:561K fairchild semi
fdmc8321ldc.pdf pdf_icon

December 2014 FDMC8321LDC N-Channel Power Trench MOSFET 40 V, 108 A, 2.5 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.5 m at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 m at VGS = 4.... See More ⇒

8.1. Size:367K fairchild semi
fdmc8360l.pdf pdf_icon

June 2013 FDMC8360L N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 2.1 m at VGS = 10 V, ID = 27 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 3.1 m ... See More ⇒

Detailed specifications: NDD05N50Z , NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ , NDF04N62Z , NDF05N50Z , NDF06N60Z , IRF3205 , NDF06N62Z , NDF08N50Z , NDF08N60Z , NDF10N60Z , FDMS7678 , NDF10N62Z , NDF11N50Z , NIC9N05TS1 .